富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
N0608N-ZK-E1-AY

N0608N-ZK-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

11,840 -
N0608N-ZK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 52A (Tc) 10V 14.3mOhm @ 26A, 10V Surface Mount 4V @ 1mA 37 nC @ 10 V 60 V ±20V 1950 pF @ 25 V - - TO-252 - 1W (Ta), 50.2W (Tc) 150°C
NP75N04VUK-E1-AY

NP75N04VUK-E1-AY

MOSFET N-CH 40V 75A TO252

Renesas Electronics Corporation

8,778 -
NP75N04VUK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 5.7mOhm @ 38A, 10V Surface Mount 4V @ 250µA 45 nC @ 10 V 40 V ±20V 2400 pF @ 25 V - - TO-252 (MP-3ZP) - 1.2W (Ta), 75W (Tc) 175°C
RJJ0315DPA-00#J5A

RJJ0315DPA-00#J5A

MOSFET P-CH 30V 35A

Renesas Electronics Corporation

2,850 -
RJJ0315DPA-00#J5A

数据表

- 8-WDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 35A (Ta) - 5.9mOhm @ 17.5A, 10V Surface Mount 2.5V @ 1mA 48 nC @ 4.5 V 30 V - 4300 pF @ 10 V - - - - 30W (Tc) 150°C (TJ)
2SK1060-AZ

2SK1060-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,526 -
2SK1060-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP20P06YLG-E1-AY

NP20P06YLG-E1-AY

MOSFET P-CH 60V 20A 8HSON

Renesas Electronics Corporation

4,853 -
NP20P06YLG-E1-AY

数据表

- 8-PowerLDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 47mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 51 nC @ 10 V 60 V ±20V 2407 pF @ 25 V - - 8-HSON (5x5.4) - 1W (Ta), 57W (Tc) 175°C
HAT2173H-EL-E

HAT2173H-EL-E

MOSFET N-CH 100V 25A LFPAK

Renesas Electronics Corporation

4,206 -
HAT2173H-EL-E

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta) 8V, 10V 15mOhm @ 12.5A, 10V Surface Mount 6V @ 20mA 61 nC @ 10 V 100 V ±20V 4350 pF @ 10 V - - LFPAK - 30W (Tc) 150°C (TJ)
RJK2055DPA-00#J0

RJK2055DPA-00#J0

MOSFET N-CH 200V 20A 8WPAK

Renesas Electronics Corporation

9,730 -
RJK2055DPA-00#J0

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 69mOhm @ 10A, 10V Surface Mount - 38 nC @ 10 V 200 V ±30V 2400 pF @ 25 V - - 8-WPAK (3) - 30W (Tc) 150°C (TJ)
UPA2738GR-E1-AX

UPA2738GR-E1-AX

MOSFET P-CH 30V 10A 8SOP

Renesas Electronics Corporation

10,325 -
UPA2738GR-E1-AX

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 15mOhm @ 10A, 10V Surface Mount - 37 nC @ 10 V 30 V ±20V 1450 pF @ 10 V - - 8-SOP - 2.5W (Ta) 150°C
RJK0355DSP-00#J0

RJK0355DSP-00#J0

MOSFET N-CH 30V 12A 8SOP

Renesas Electronics Corporation

10,000 -
RJK0355DSP-00#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 11.1mOhm @ 6A, 10V Surface Mount - 6 nC @ 4.5 V 30 V ±20V 860 pF @ 10 V - - 8-SOP - 1.8W (Ta) 150°C (TJ)
UPA2720GR-E1-A

UPA2720GR-E1-A

MOSFET N-CH 30V 14A 8PSOP

Renesas Electronics Corporation

2,500 -
UPA2720GR-E1-A

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) - 6.6mOhm @ 7A, 10V Surface Mount 2.5V @ 1mA 27 nC @ 5 V 30 V - 2800 pF @ 10 V - - 8-PSOP - - -
共 1311 条记录«上一页1... 4142434445464748...132下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户