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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FS30AS-2-T13#B00HIGH SPEED SWITCHING N-CHANNEL Renesas Electronics Corporation |
9,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | - | 100mOhm @ 15A, 10V | Surface Mount | 4V @ 1mA | - | 100 V | - | 1250 pF @ 10 V | - | - | MP-3A | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
UPA2751GR-E1-AN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
7,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
H5N2521FN-E#T2POWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
5,732 | - |
|
数据表 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 10V | 2.2Ohm @ 1.5A, 10V | Through Hole | 4.5V @ 1mA | 5.3 nC @ 10 V | 250 V | ±30V | 160 pF @ 25 V | - | - | TO-220FN | - | 20W (Ta) | 150°C |
|
RJK0856DPB-00#J5MOSFET N-CH 80V 35A LFPAK Renesas Electronics Corporation |
2,500 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Ta) | 10V | 8.9mOhm @ 17.5A, 10V | Surface Mount | - | 40 nC @ 10 V | 80 V | ±20V | 3000 pF @ 10 V | - | - | LFPAK | - | 65W (Tc) | 150°C (TJ) |
|
RJK0216DPA-WS#J53N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,135 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK1525DPS-00#T2N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,467 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2724UT1A-E2-AYN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
594,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
HAT2279H-EL-EMOSFET N-CH 80V 30A LFPAK Renesas Electronics Corporation |
9,498 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | 4.5V, 10V | 12mOhm @ 15A, 10V | Surface Mount | - | 60 nC @ 10 V | 80 V | ±20V | 3520 pF @ 10 V | - | - | LFPAK | - | 25W (Tc) | 150°C (TJ) |
|
|
FX20ASJ-03F-T13#X3P-CHANNEL POWER MOSFET Renesas Electronics Corporation |
5,876 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NP32N055SDE-E1-AZNP32N055SDE-E1-AZ - MOS FIELD EF Renesas |
3,719 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Tc) | 4.5V, 10V | 24mOhm @ 16A, 10V | Surface Mount | 2.5V @ 250µA | 41 nC @ 10 V | 55 V | ±20V | 2000 pF @ 25 V | - | - | TO-252 (MP-3ZK) | - | 1.2W (Ta), 66W (Tc) | 175°C |
