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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HAT2160H-EL-EMOSFET N-CH 20V 60A LFPAK Renesas Electronics Corporation |
6,528 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Ta) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | Surface Mount | 2.3V @ 1mA | 54 nC @ 4.5 V | 20 V | ±20V | 7750 pF @ 10 V | - | - | LFPAK | - | 30W (Tc) | 150°C (TJ) |
|
UPA2714GR-E1-AP-CHANNEL SWITCHING POWER MOSFET Renesas Electronics Corporation |
5,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0213DPA-00#J53N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
108,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03E1DNS-00#J5POWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
79,482 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Ta) | - | 6.9mOhm @ 12.5A, 10V | Surface Mount | - | 10.7 nC @ 4.5 V | 30 V | - | 2300 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 15W (Tc) | 150°C (TJ) |
|
UPA2810T1L-E2-AYMOSFET P-CH 30V 13A 8DFN Renesas Electronics Corporation |
75,000 | - |
|
数据表 |
- | 8-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Ta) | - | 12mOhm @ 13A, 10V | Surface Mount | 2.5V @ 1mA | 40 nC @ 10 V | 30 V | - | 1860 pF @ 10 V | - | - | 8-DFN3333 (3.3x3.3) | - | 1.5W (Ta) | 150°C (TJ) |
|
UPA2806T1L-E1-AYN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
33,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK1028DNS-00#J5ABU / MOSFET Renesas Electronics Corporation |
9,620 | - |
|
数据表 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 4.5V, 10V | 165mOhm @ 2A, 10V | Surface Mount | 2.5V @ 1mA | 3.7 nC @ 4.5 V | 100 V | +12V, -5V | 450 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 10W (Ta) | 150°C |
|
|
UPA2810T1L-E1-AYMOSFET P-CH 30V 13A 8DFN Renesas Electronics Corporation |
3,000 | - |
|
数据表 |
- | 8-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Ta) | - | 12mOhm @ 13A, 10V | Surface Mount | 2.5V @ 1mA | 40 nC @ 10 V | 30 V | - | 1860 pF @ 10 V | - | - | 8-DFN3333 (3.3x3.3) | - | 1.5W (Ta) | 150°C (TJ) |
|
NP23N06YDG-E1-AYMOSFET N-CH 60V 23A 8HSON Renesas Electronics Corporation |
10,000 | - |
|
数据表 |
- | 8-SMD, Flat Lead Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 5V, 10V | 27mOhm @ 11.5A, 10V | Surface Mount | 2.5V @ 250µA | 41 nC @ 10 V | 60 V | ±20V | 1800 pF @ 25 V | - | - | 8-HSON | - | 1W (Ta), 60W (Tc) | 175°C (TJ) |
|
|
NP45N06VDK-E1-AYMOSFET N-CH 60V 45A TO252 Renesas Electronics Corporation |
7,430 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 11.6mOhm @ 23A, 10V | Surface Mount | 2.5V @ 250µA | 38 nC @ 10 V | 60 V | ±20V | 2300 pF @ 25 V | - | - | TO-252 (MP-3ZP) | - | 1.2W (Ta), 75W (Tc) | 175°C |
