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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UPA2742GR-E1-ATN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
7,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2718AGR-E2-ATMOSFET P-CH 30V 13A 8PSOP Renesas Electronics Corporation |
5,000 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Ta) | - | 9mOhm @ 6.5A, 10V | Surface Mount | 2.5V @ 1mA | 67 nC @ 10 V | 30 V | - | 2810 pF @ 10 V | - | - | 8-PSOP | - | - | - |
|
UPA2718GR-E1-ATP-CHANNEL POWER MOSFET Renesas Electronics Corporation |
5,000 | - |
|
数据表 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0204DPA-00#J53MOSFET N-CH 25V 50A 8WPAK Renesas Electronics Corporation |
3,000 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Ta) | - | 2.7mOhm @ 25A, 10V | Surface Mount | 2.5V @ 1mA | 22 nC @ 4.5 V | 25 V | - | 4240 pF @ 10 V | - | - | 8-WPAK | - | - | 150°C (TJ) |
|
UPA2719GR(1)-E1-ATN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0204DPA-WS#J53N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,950 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SJ128-AZPOWER MOSFET Renesas Electronics Corporation |
448 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SJ279S-EP-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,958 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
UPA2351T1G(2)-E4-APOWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
2,855,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0329DPB-01#J0MOSFET N-CH 30V 55A LFPAK Renesas Electronics Corporation |
19,257 | - |
|
数据表 |
- | SC-100, SOT-669 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55A (Ta) | - | 2.3mOhm @ 27.5A, 10V | Surface Mount | 2.5V @ 1mA | 35 nC @ 4.5 V | 30 V | - | 5330 pF @ 10 V | - | - | LFPAK | - | 60W (Tc) | 150°C (TJ) |
