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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJK0355DPA-WS#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
3,405 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK0353DPA-WS#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,830 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0355DPA-01#J0BMOSFET N-CH 30V 30A 8WPAK Renesas Electronics Corporation |
2,500 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | - | 10.7mOhm @ 15A, 10V | Surface Mount | - | 6.3 nC @ 4.5 V | 30 V | - | 860 pF @ 10 V | - | - | 8-WPAK | - | 25W (Tc) | 150°C (TJ) |
|
|
RJK0351DPA-01#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HAT2050TWS-E1A, 100V, N-CHANNEL MOSFET Renesas Electronics Corporation |
2,405 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0394DPA-WS#J53POWER TRANSISTOR, MOSFET Renesas Electronics Corporation |
1,055 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RJK0366DPA-WS#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,008 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HAT2166H-EL-EMOSFET N-CH 30V 45A LFPAK Renesas Electronics Corporation |
7,622 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Ta) | 4.5V, 10V | 3.8mOhm @ 22.5A, 10V | Surface Mount | 2.5V @ 1mA | 27 nC @ 4.5 V | 30 V | ±20V | 4400 pF @ 10 V | - | - | LFPAK | - | 25W (Tc) | 150°C (TJ) |
|
|
RJK03E0DNS-00#J5POWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
140,000 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | - | 5.6mOhm @ 15A, 10V | Surface Mount | - | 15.2 nC @ 4.5 V | 30 V | - | 3050 pF @ 10 V | - | - | 8-HWSON (3.3x3.3) | - | 20W (Tc) | 150°C (TJ) |
|
|
2SJ356(0)-T2-AZP-CHANNEL MOSFET Renesas Electronics Corporation |
37,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
