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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UPA2766T1A-E2-AYMOSFET N-CH 30V 130A 8HVSON Renesas Electronics Corporation |
2,216 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 4.5V, 10V | 1.82mOhm @ 39A, 4.5V | Surface Mount | - | 257 nC @ 10 V | 30 V | ±20V | 10850 pF @ 10 V | - | - | 8-HVSON (5x5.4) | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) |
|
RJK0352DSP-00#J0MOSFET N-CH 30V 18A 8SOP Renesas Electronics Corporation |
182,500 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 18A (Ta) | - | 5.6mOhm @ 9A, 10V | Surface Mount | - | 16 nC @ 4.5 V | 30 V | - | 2440 pF @ 10 V | - | - | 8-SOP | - | 2W (Ta) | 150°C (TJ) |
|
RJK0212DPA-00#J5AMOSFET N-CH WPAK Renesas Electronics Corporation |
27,000 | - |
|
数据表 |
- | 8-PowerVDFN | Bulk | Obsolete | - | - | - | - | - | Surface Mount | - | - | - | - | - | - | - | WPAK(3) | - | - | - |
|
HAT2168H-EL-EMOSFET N-CH 30V 30A LFPAK Renesas Electronics Corporation |
2,151 | - |
|
数据表 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta) | 4.5V, 10V | 7.9mOhm @ 15A, 10V | Surface Mount | - | 11 nC @ 4.5 V | 30 V | ±20V | 1730 pF @ 10 V | - | - | LFPAK | - | 15W (Tc) | 150°C (TJ) |
|
RJK03M8DNS-WS#J5N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
4,880 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK0352DSP-WS#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,850 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
N0601N-ZK-E1-AYMOSFET N-CH 60V 100A TO263 Renesas Electronics Corporation |
3,198 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Ta) | 10V | 4.2mOhm @ 50A, 10V | Surface Mount | - | 133 nC @ 10 V | 60 V | ±20V | 7730 pF @ 25 V | - | - | TO-263 | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) |
|
RJK0358DSP-00#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
697,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
UPA2680T1E-E2-ATMOSFET N-CH 20V 3A 6MLP Renesas Electronics Corporation |
564,000 | - |
|
数据表 |
- | 6-VDFN Exposed Pad | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Ta) | - | 50mOhm @ 3A, 10V | Surface Mount | 2V @ 250µA | 3.1 nC @ 4.5 V | 20 V | - | 190 pF @ 10 V | - | Schottky Diode (Isolated) | 6-MLP (3x3) | - | - | - |
|
|
RJK0358DSP-01#J0N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
187,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
