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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVMFS5C456NLWFT1G

NVMFS5C456NLWFT1G

MOSFET N-CH 40V 5DFN

onsemi

2,439 -
NVMFS5C456NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 87A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V Surface Mount 2V @ 250µA 18 nC @ 10 V 40 V ±20V 1600 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
FDB6021P

FDB6021P

MOSFET P-CH 20V 28A TO263AB

onsemi

9,515 -
FDB6021P

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 28A (Ta) 1.8V, 4.5V 30mOhm @ 14A, 4.5V Surface Mount 1.5V @ 250µA 28 nC @ 4.5 V 20 V ±8V 1890 pF @ 10 V - - TO-263 (D2PAK) - 37W (Tc) -65°C ~ 175°C (TJ)
IPC045N10N3X1SA1

IPC045N10N3X1SA1

MOSFET N-CH 100V 1A SAWN ON FOIL

Infineon Technologies

6,259 -
IPC045N10N3X1SA1

数据表

OptiMOS™ Die Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 1A (Tj) 10V 100mOhm @ 2A, 10V Surface Mount 3.5V @ 33µA - 100 V - - - - Sawn on foil - - -
IRF5804

IRF5804

MOSFET P-CH 40V 2.5A MICRO6

Infineon Technologies

8,752 -
IRF5804

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 198mOhm @ 2.5A, 10V Surface Mount 3V @ 250µA 21 nC @ 10 V 40 V ±20V 680 pF @ 25 V - - Micro6™(TSOP-6) - 2W (Ta) -
AO3434LS

AO3434LS

MOSFET N-CH 30V 3.5A SOT23-3

Alpha & Omega Semiconductor Inc.

8,356 -
AO3434LS

数据表

- 3-SMD, SOT-23-3 Variant Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 52mOhm @ 4.2A, 10V Surface Mount 1.8V @ 250µA 7.2 nC @ 10 V 30 V ±20V 340 pF @ 15 V - - SOT-23-3 - 1W (Ta) -55°C ~ 150°C (TJ)
TPCA8109(TE12L1,V

TPCA8109(TE12L1,V

MOSFET P-CH 30V 24A 8SOP

Toshiba Semiconductor and Storage

9,629 -
TPCA8109(TE12L1,V

数据表

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 24A (Ta) 4.5V, 10V 9mOhm @ 12A, 10V Surface Mount 2V @ 500µA 56 nC @ 10 V 30 V +20V, -25V 2400 pF @ 10 V - - 8-SOP Advance (5x5) - 1.6W (Ta), 30W (Tc) 150°C
TPCC8104,L1Q(CM

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

5,080 -
TPCC8104,L1Q(CM

数据表

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V Surface Mount 2V @ 500µA 58 nC @ 10 V 30 V +20V, -25V 2260 pF @ 10 V - - 8-TSON Advance (3.1x3.1) - 700mW (Ta), 27W (Tc) 150°C
AOI4C60

AOI4C60

MOSFET N-CH 600V 4A TO251A

Alpha & Omega Semiconductor Inc.

6,984 -
AOI4C60

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 950mOhm @ 1.3A, 10V Through Hole 5V @ 250µA 18 nC @ 10 V 600 V ±30V 910 pF @ 100 V - - TO-251A - 125W (Tc) -50°C ~ 150°C (TJ)
TPCC8105,L1Q(CM

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage

2,514 -
TPCC8105,L1Q(CM

数据表

U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V Surface Mount 2V @ 500µA 76 nC @ 10 V 30 V +20V, -25V 3240 pF @ 10 V - - 8-TSON Advance (3.3x3.3) - 700mW (Ta), 30W (Tc) 150°C
PJMP900N60EC_T0_00001

PJMP900N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,998 -
PJMP900N60EC_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 8.8 nC @ 10 V 600 V ±30V 310 pF @ 400 V - - TO-220AB-L - 47.5W (Tc) -55°C ~ 150°C (TJ)
FQPF4N50

FQPF4N50

MOSFET N-CH 500V 2.3A TO220F

onsemi

6,665 -
FQPF4N50

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.3A (Tc) 10V 2.7Ohm @ 1.15A, 10V Through Hole 5V @ 250µA 13 nC @ 10 V 500 V ±30V 460 pF @ 25 V - - TO-220F-3 - 35W (Tc) -55°C ~ 150°C (TJ)
TPCC8136.LQ

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage

3,328 -
TPCC8136.LQ

数据表

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V Surface Mount 1.2V @ 1mA 36 nC @ 5 V 20 V ±12V 2350 pF @ 10 V - - 8-TSON Advance (3.1x3.1) - 700mW (Ta), 18W (Tc) 150°C
NTMFS0D8N03CT1G

NTMFS0D8N03CT1G

MOSFET, POWER, SINGLE N-CHANNEL,

onsemi

1,445 -
NTMFS0D8N03CT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54A (Ta), 337A (Tc) 4.5V, 10V 0.74mOhm @ 20A, 10V Surface Mount 2.2V @ 200µA 50 nC @ 4.5 V 30 V ±20V 7690 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
PJP3NA50_T0_00001

PJP3NA50_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

2,372 -
PJP3NA50_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 6.5 nC @ 10 V 500 V ±30V 260 pF @ 25 V - - TO-220AB - 44W (Tc) -55°C ~ 150°C (TJ)
TK40J20D,S1F(O

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage

7,100 -
TK40J20D,S1F(O

数据表

π-MOSVIII TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 40A (Ta) 10V 44mOhm @ 20A, 10V Through Hole 3.5V @ 1mA 100 nC @ 10 V 200 V ±20V 4300 pF @ 100 V - - TO-3P(N) - 260W (Tc) 150°C
IRF9520STRLPBF

IRF9520STRLPBF

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix

1,368 -
IRF9520STRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 100 V ±20V 390 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
STP4NB50

STP4NB50

MOSFET N-CH 500V 3.8A TO220AB

STMicroelectronics

5,865 -
STP4NB50

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 2.8Ohm @ 1.9A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 500 V ±30V 400 pF @ 25 V - - TO-220 - 80W (Tc) 150°C (TJ)
TPCC8104,L1Q

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

7,515 -
TPCC8104,L1Q

数据表

U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V Surface Mount 2V @ 500µA 58 nC @ 10 V 30 V +20V, -25V 2260 pF @ 10 V - - 8-TSON Advance (3.1x3.1) - 700mW (Ta), 27W (Tc) 150°C
STP20N65M5

STP20N65M5

MOSFET N-CH 650V 18A TO220

STMicroelectronics

939 -
STP20N65M5

数据表

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 650 V ±25V 1345 pF @ 100 V - - TO-220 - 130W (Tc) -55°C ~ 150°C (TJ)
FQD5N50CTF

FQD5N50CTF

MOSFET N-CH 500V 4A DPAK

onsemi

4,208 -
FQD5N50CTF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.4Ohm @ 2A, 10V Surface Mount 4V @ 250µA 24 nC @ 10 V 500 V ±30V 625 pF @ 25 V - - TO-252AA - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
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