Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 36

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT20M22JVRU3 MOSFET N-CH 200V 97A SOT227 Microchip Technology	8,545	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	97A (Tc)	10V	22mOhm @ 48.5A, 10V	Chassis Mount	4V @ 2.5mA	290 nC @ 10 V	200 V	±30V	8500 pF @ 25 V	-	-	SOT-227	-	450W (Tc)	-55°C ~ 150°C (TJ)
APT32M80J MOSFET N-CH 800V 33A ISOTOP Microchip Technology	8,366	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	190mOhm @ 24A, 10V	Chassis Mount	5V @ 2.5mA	303 nC @ 10 V	800 V	±30V	9326 pF @ 25 V	-	-	ISOTOP®	-	543W (Tc)	-55°C ~ 150°C (TJ)
APT47M60J MOSFET N-CH 600V 49A ISOTOP Microchip Technology	5	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	90mOhm @ 33A, 10V	Chassis Mount	5V @ 2.5mA	330 nC @ 10 V	600 V	±30V	13190 pF @ 25 V	-	-	ISOTOP®	-	540W (Tc)	-55°C ~ 150°C (TJ)
APT58F50J MOSFET N-CH 500V 58A ISOTOP Microchip Technology	3,336	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	65mOhm @ 42A, 10V	Chassis Mount	5V @ 2.5mA	340 nC @ 10 V	500 V	±30V	13500 pF @ 25 V	-	-	ISOTOP®	-	540W (Tc)	-55°C ~ 150°C (TJ)
APT20M18LVFRG MOSFET N-CH 200V 100A TO264 Microchip Technology	5,584	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	18mOhm @ 50A, 10V	Through Hole	4V @ 2.5mA	330 nC @ 10 V	200 V	-	9880 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT8020B2FLLG MOSFET N-CH 800V 38A T-MAX Microchip Technology	7,910	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	-	220mOhm @ 19A, 10V	Through Hole	5V @ 2.5mA	195 nC @ 10 V	800 V	-	5200 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT50M75JLLU3 MOSFET N-CH 500V 51A SOT227 Microchip Technology	4,801	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	75mOhm @ 25.5A, 10V	Chassis Mount	5V @ 1mA	123 nC @ 10 V	500 V	±30V	5590 pF @ 25 V	-	-	SOT-227	-	290W (Tc)	-55°C ~ 150°C (TJ)
APT6010LFLLG MOSFET N-CH 600V 54A TO264 Microchip Technology	6,965	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	-	100mOhm @ 27A, 10V	Through Hole	5V @ 2.5mA	150 nC @ 10 V	600 V	-	6710 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT12060LVFRG MOSFET N-CH 1200V 20A TO264 Microchip Technology	7,668	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	-	600mOhm @ 10A, 10V	Through Hole	4V @ 1mA	650 nC @ 10 V	1200 V	-	9500 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT12067LFLLG MOSFET N-CH 1200V 18A TO264 Microchip Technology	6,930	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	-	670mOhm @ 9A, 10V	Through Hole	5V @ 2.5mA	150 nC @ 10 V	1200 V	-	4420 pF @ 25 V	-	-	TO-264 [L]	-	-	-

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