Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 33

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT26F120B2 MOSFET N-CH 1200V 27A T-MAX Microchip Technology	2,670	-	询价单	数据表	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	650mOhm @ 14A, 10V	Through Hole	5V @ 2.5mA	300 nC @ 10 V	1200 V	±30V	9670 pF @ 25 V	-	-	T-MAX™	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT26F120L MOSFET N-CH 1200V 27A TO264 Microchip Technology	5,862	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	650mOhm @ 14A, 10V	Through Hole	5V @ 2.5mA	300 nC @ 10 V	1200 V	±30V	9670 pF @ 25 V	-	-	TO-264 [L]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT50M65LLLG MOSFET N-CH 500V 67A TO264 Microchip Technology	3,299	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	65mOhm @ 33.5A, 10V	Through Hole	5V @ 2.5mA	141 nC @ 10 V	500 V	±30V	7010 pF @ 25 V	-	-	TO-264 [L]	-	694W (Tc)	-55°C ~ 150°C (TJ)
APT1201R5BVFRG MOSFET N-CH 1200V 10A TO247 Microchip Technology	6,530	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	1.5Ohm @ 5A, 10V	Through Hole	4V @ 1mA	285 nC @ 10 V	1200 V	-	4440 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT50M65B2FLLG MOSFET N-CH 500V 67A T-MAX Microchip Technology	3,089	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	65mOhm @ 33.5A, 10V	Through Hole	5V @ 2.5mA	141 nC @ 10 V	500 V	±30V	7010 pF @ 25 V	-	-	T-MAX™ [B2]	-	694W (Tc)	-55°C ~ 150°C (TJ)
APT50M65LFLLG MOSFET N-CH 500V 67A TO264 Microchip Technology	9,397	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	65mOhm @ 33.5A, 10V	Through Hole	5V @ 2.5mA	141 nC @ 10 V	500 V	±30V	7010 pF @ 25 V	-	-	TO-264 [L]	-	694W (Tc)	-55°C ~ 150°C (TJ)
APT38M50J MOSFET N-CH 500V 38A ISOTOP Microchip Technology	3,719	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	100mOhm @ 28A, 10V	Chassis Mount	5V @ 2.5mA	220 nC @ 10 V	500 V	±30V	8800 pF @ 25 V	-	-	ISOTOP®	-	357W (Tc)	-55°C ~ 150°C (TJ)
APT30F60J MOSFET N-CH 600V 31A ISOTOP Microchip Technology	8,852	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	150mOhm @ 21A, 10V	Chassis Mount	5V @ 2.5mA	215 nC @ 10 V	600 V	±30V	8590 pF @ 25 V	-	-	ISOTOP®	-	355W (Tc)	-55°C ~ 150°C (TJ)
APT30M36LLLG MOSFET N-CH 300V 84A TO264 Microchip Technology	6,489	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	-	36mOhm @ 42A, 10V	Through Hole	5V @ 2.5mA	115 nC @ 10 V	300 V	-	6480 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT51M50J MOSFET N-CH 500V 51A ISOTOP Microchip Technology	6,713	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	75mOhm @ 37A, 10V	Chassis Mount	5V @ 2.5mA	290 nC @ 10 V	500 V	±30V	11600 pF @ 25 V	-	-	ISOTOP®	-	480W (Tc)	-55°C ~ 150°C (TJ)

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