Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 37

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT25M100J MOSFET N-CH 1000V 25A ISOTOP Microchip Technology	9,647	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	330mOhm @ 18A, 10V	Chassis Mount	5V @ 2.5mA	305 nC @ 10 V	1000 V	±30V	9835 pF @ 25 V	-	-	ISOTOP®	-	545W (Tc)	-55°C ~ 150°C (TJ)
APT8020B2LLG MOSFET N-CH 800V 38A T-MAX Microchip Technology	8,984	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	200mOhm @ 19A, 10V	Through Hole	5V @ 2.5mA	195 nC @ 10 V	800 V	±30V	5200 pF @ 25 V	-	-	T-MAX™ [B2]	-	694W (Tc)	-55°C ~ 150°C (TJ)
APT22F120B2 MOSFET N-CH 1200V 23A T-MAX Microchip Technology	9,136	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	700mOhm @ 12A, 10V	Through Hole	5V @ 2.5mA	260 nC @ 10 V	1200 V	±30V	8370 pF @ 25 V	-	-	T-MAX™ [B2]	-	1040W (Tc)	-55°C ~ 150°C (TJ)
APT50M75JLL MOSFET N-CH 500V 51A ISOTOP Microchip Technology	7,823	-	询价单	数据表	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	-	75mOhm @ 25.5A, 10V	Chassis Mount	5V @ 2.5mA	125 nC @ 10 V	500 V	-	5590 pF @ 25 V	-	-	ISOTOP®	-	-	-
APT47F60J MOSFET N-CH 600V 49A ISOTOP Microchip Technology	9,704	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	90mOhm @ 33A, 10V	Chassis Mount	5V @ 2.5mA	330 nC @ 10 V	600 V	±30V	13190 pF @ 25 V	-	-	ISOTOP®	-	540W (Tc)	-55°C ~ 150°C (TJ)
APT20M20LFLLG MOSFET N-CH 200V 100A TO264 Microchip Technology	7,054	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	20mOhm @ 50A, 10V	Through Hole	5V @ 2.5mA	110 nC @ 10 V	200 V	-	6850 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT58M50JCU2 MOSFET N-CH 500V 58A SOT227 Microchip Technology	5,636	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	65mOhm @ 42A, 10V	Chassis Mount	5V @ 2.5mA	340 nC @ 10 V	500 V	±30V	10800 pF @ 25 V	-	-	SOT-227	-	543W (Tc)	-40°C ~ 150°C (TJ)
APT1201R5BVRG MOSFET N-CH 1200V 10A TO247 Microchip Technology	4,901	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	1.5Ohm @ 5A, 10V	Through Hole	4V @ 1mA	28 nC @ 10 V	1200 V	-	4440 pF @ 25 V	-	-	TO-247-3	-	-	-
APT30M40JVR MOSFET N-CH 300V 70A ISOTOP Microchip Technology	9,701	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	40mOhm @ 500mA, 10V	Chassis Mount	4V @ 2.5mA	425 nC @ 10 V	300 V	±30V	10200 pF @ 25 V	-	-	ISOTOP®	-	450W (Tc)	-55°C ~ 150°C (TJ)
APT5010JVRU3 MOSFET N-CH 500V 44A SOT227 Microchip Technology	7,804	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	100mOhm @ 22A, 10V	Chassis Mount	4V @ 2.5mA	312 nC @ 10 V	500 V	±30V	7410 pF @ 25 V	-	-	SOT-227	-	450W (Tc)	-55°C ~ 150°C (TJ)

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