Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 35

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT8020LLLG MOSFET N-CH 800V 38A TO264 Microchip Technology	2,455	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	-	200mOhm @ 19A, 10V	Through Hole	5V @ 2.5mA	195 nC @ 10 V	800 V	-	5200 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT10045B2LLG MOSFET N-CH 1000V 23A T-MAX Microchip Technology	7,545	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	10V	450mOhm @ 11.5A, 10V	Through Hole	5V @ 2.5mA	154 nC @ 10 V	1000 V	±30V	4350 pF @ 25 V	-	-	T-MAX™ [B2]	-	565W (Tc)	-55°C ~ 150°C (TJ)
APT10035LLLG MOSFET N-CH 1000V 28A TO264 Microchip Technology	2,480	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	350mOhm @ 14A, 10V	Through Hole	5V @ 2.5mA	186 nC @ 10 V	1000 V	±30V	5185 pF @ 25 V	-	-	TO-264 [L]	-	690W (Tc)	-55°C ~ 150°C (TJ)
APT58M50J MOSFET N-CH 500V 58A ISOTOP Microchip Technology	9,375	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	10V	65mOhm @ 42A, 10V	Chassis Mount	5V @ 2.5mA	340 nC @ 10 V	500 V	±30V	13500 pF @ 25 V	-	-	ISOTOP®	-	540W (Tc)	-55°C ~ 150°C (TJ)
APT20M22JVR MOSFET N-CH 200V 97A ISOTOP Microchip Technology	9,590	-	询价单	数据表	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	97A (Tc)	-	22mOhm @ 500mA, 10V	Chassis Mount	4V @ 2.5mA	435 nC @ 10 V	200 V	-	10200 pF @ 25 V	-	-	ISOTOP®	-	-	-
APT10035LFLLG MOSFET N-CH 1000V 28A TO264 Microchip Technology	9,822	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	-	370mOhm @ 14A, 10V	Through Hole	5V @ 2.5mA	186 nC @ 10 V	1000 V	-	5185 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT10M11JVRU2 MOSFET N-CH 100V 142A SOT227 Microchip Technology	2,342	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	142A (Tc)	10V	11mOhm @ 71A, 10V	Chassis Mount	4V @ 2.5mA	300 nC @ 10 V	100 V	±30V	8600 pF @ 25 V	-	-	SOT-227	-	450W (Tc)	-55°C ~ 150°C (TJ)
APT10M11JVRU3 MOSFET N-CH 100V 142A SOT227 Microchip Technology	4,243	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	142A (Tc)	10V	11mOhm @ 71A, 10V	Chassis Mount	4V @ 2.5mA	300 nC @ 10 V	100 V	±30V	8600 pF @ 25 V	-	-	SOT-227	-	450W (Tc)	-55°C ~ 150°C (TJ)
APT10035B2FLLG MOSFET N-CH 1000V 28A T-MAX Microchip Technology	4,190	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	370mOhm @ 14A, 10V	Through Hole	5V @ 2.5mA	186 nC @ 10 V	1000 V	±30V	5185 pF @ 25 V	-	-	T-MAX™ [B2]	-	690W (Tc)	-55°C ~ 150°C (TJ)
APT20M22JVRU2 MOSFET N-CH 200V 97A SOT227 Microchip Technology	6,223	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	97A (Tc)	10V	22mOhm @ 48.5A, 10V	Chassis Mount	4V @ 2.5mA	290 nC @ 10 V	200 V	±30V	8500 pF @ 25 V	-	-	SOT-227	-	450W (Tc)	-55°C ~ 150°C (TJ)

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