Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 32

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT6011B2VRG MOSFET N-CH 600V 49A T-MAX Microchip Technology	6,008	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	-	110mOhm @ 24.5A, 10V	Through Hole	4V @ 2.5mA	450 nC @ 10 V	600 V	-	8900 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT20M18B2VFRG MOSFET N-CH 200V 100A T-MAX Microchip Technology	3,004	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	18mOhm @ 50A, 10V	Through Hole	4V @ 2.5mA	330 nC @ 10 V	200 V	-	9880 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT10045LLLG MOSFET N-CH 1000V 23A TO264 Microchip Technology	6,097	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	-	450mOhm @ 11.5A, 10V	Through Hole	5V @ 2.5mA	154 nC @ 10 V	1000 V	-	4350 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT30M60J MOSFET N-CH 600V 31A ISOTOP Microchip Technology	4,983	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	150mOhm @ 21A, 10V	Chassis Mount	5V @ 2.5mA	215 nC @ 10 V	600 V	±30V	5890 pF @ 25 V	-	-	ISOTOP®	-	355W (Tc)	-55°C ~ 150°C (TJ)
APT1001R6BFLLG MOSFET N-CH 1000V 8A TO247 Microchip Technology	5,411	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	1.6Ohm @ 4A, 10V	Through Hole	5V @ 1mA	55 nC @ 10 V	1000 V	±30V	1320 pF @ 25 V	-	-	TO-247 [B]	-	266W (Tc)	-55°C ~ 150°C (TJ)
APT10045B2FLLG MOSFET N-CH 1000V 23A T-MAX Microchip Technology	2,041	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	-	460mOhm @ 11.5A, 10V	Through Hole	5V @ 2.5mA	154 nC @ 10 V	1000 V	-	4350 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT10045LFLLG MOSFET N-CH 1000V 23A TO264 Microchip Technology	7,974	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23A (Tc)	-	460mOhm @ 11.5A, 10V	Through Hole	5V @ 2.5mA	154 nC @ 10 V	1000 V	-	4350 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT6010B2LLG MOSFET N-CH 600V 54A T-MAX Microchip Technology	4,802	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	10V	100mOhm @ 27A, 10V	Through Hole	5V @ 2.5mA	150 nC @ 10 V	600 V	±30V	6710 pF @ 25 V	-	-	T-MAX™ [B2]	-	690W (Tc)	-55°C ~ 150°C (TJ)
APT38F50J MOSFET N-CH 500V 38A ISOTOP Microchip Technology	5,786	-	询价单	数据表	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	100mOhm @ 28A, 10V	Chassis Mount	5V @ 2.5mA	220 nC @ 10 V	500 V	±30V	8800 pF @ 25 V	-	-	ISOTOP®	-	355W (Tc)	-55°C ~ 150°C (TJ)
APT8024LFLLG MOSFET N-CH 800V 31A TO264 Microchip Technology	6,826	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	260mOhm @ 15.5A, 10V	Through Hole	5V @ 2.5mA	160 nC @ 10 V	800 V	±30V	4670 pF @ 25 V	-	-	TO-264 [L]	-	565W (Tc)	-55°C ~ 150°C (TJ)

共 621 条记录«上一页 1... 28 29 30 313233 34 35...63 下一页»