订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT29F80JMOSFET N-CH 800V 31A ISOTOP Microchip Technology |
7,916 | - |
|
数据表 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 210mOhm @ 24A, 10V | Chassis Mount | 5V @ 2.5mA | 303 nC @ 10 V | 800 V | ±30V | 9326 pF @ 25 V | - | - | ISOTOP® | - | 543W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT22F100JMOSFET N-CH 1000V 23A ISOTOP Microchip Technology |
5,101 | - |
|
数据表 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 380mOhm @ 18A, 10V | Chassis Mount | - | 305 nC @ 10 V | 1000 V | ±30V | 9835 pF @ 25 V | - | - | ISOTOP® | - | 545W (Tc) | -55°C ~ 150°C (TJ) |
|
APT5010JLLMOSFET N-CH 500V 41A ISOTOP Microchip Technology |
4,998 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 41A (Tc) | - | 100mOhm @ 20.5A, 10V | Chassis Mount | 5V @ 2.5mA | 95 nC @ 10 V | 500 V | - | 4360 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
APT12057B2LLGMOSFET N-CH 1200V 22A T-MAX Microchip Technology |
7,687 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | Through Hole | 5V @ 2.5mA | 290 nC @ 10 V | 1200 V | ±30V | 6200 pF @ 25 V | - | - | T-MAX™ [B2] | - | 690W (Tc) | -55°C ~ 150°C (TJ) |
|
APT50M50L2LLGMOSFET N-CH 500V 89A 264 MAX Microchip Technology |
5,440 | - |
|
数据表 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 89A (Tc) | - | 50mOhm @ 44.5A, 10V | Through Hole | 5V @ 5mA | 200 nC @ 10 V | 500 V | - | 10550 pF @ 25 V | - | - | 264 MAX™ [L2] | - | - | - |
|
|
APT26M100JCU2MOSFET N-CH 1000V 26A SOT227 Microchip Technology |
4,389 | - |
|
数据表 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Tc) | 10V | 396mOhm @ 18A, 10V | Chassis Mount | 5V @ 2.5mA | 305 nC @ 10 V | 1000 V | ±30V | 7868 pF @ 25 V | - | - | SOT-227 | - | 543W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APT6013JLLMOSFET N-CH 600V 39A ISOTOP Microchip Technology |
7,416 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 39A (Tc) | 10V | 130mOhm @ 19.5A, 10V | Chassis Mount | 5V @ 2.5mA | 130 nC @ 10 V | 600 V | ±30V | 5630 pF @ 25 V | - | - | ISOTOP® | - | 460W (Tc) | -55°C ~ 150°C (TJ) |
|
APT12057B2FLLGMOSFET N-CH 1200V 22A T-MAX Microchip Technology |
5,329 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | Through Hole | 5V @ 2.5mA | 185 nC @ 10 V | 1200 V | ±30V | 5155 pF @ 25 V | - | - | T-MAX™ [B2] | - | 690W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT50M85JVRMOSFET N-CH 500V 50A ISOTOP Microchip Technology |
8,510 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | - | 85mOhm @ 500mA, 10V | Chassis Mount | 4V @ 1mA | 535 nC @ 10 V | 500 V | - | 10800 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
|
APT8024JLLMOSFET N-CH 800V 29A ISOTOP Microchip Technology |
3,850 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 240mOhm @ 14.5A, 10V | Chassis Mount | 5V @ 2.5mA | 160 nC @ 10 V | 800 V | ±30V | 4670 pF @ 25 V | - | - | ISOTOP® | - | 460W (Tc) | -55°C ~ 150°C (TJ) |
