Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 31

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT10M09LVFRG MOSFET N-CH 100V 100A TO264 Microchip Technology	6,995	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	9mOhm @ 50A, 10V	Through Hole	4V @ 2.5mA	350 nC @ 10 V	100 V	-	9875 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT10078SLLG MOSFET N-CH 1000V 14A D3PAK Microchip Technology	4,423	-	询价单	数据表	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	780mOhm @ 7A, 10V	Surface Mount	5V @ 1mA	95 nC @ 10 V	1000 V	±30V	2525 pF @ 25 V	-	-	D3PAK	-	403W (Tc)	-55°C ~ 150°C (TJ)
APT8030LVFRG MOSFET N-CH 800V 27A TO264 Microchip Technology	7,131	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	-	300mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	510 nC @ 10 V	800 V	-	7900 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT1201R4SFLLG MOSFET N-CH 1200V 9A D3PAK Microchip Technology	6,540	-	询价单	数据表	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	-	1.4Ohm @ 4.5A, 10V	Surface Mount	5V @ 1mA	120 nC @ 10 V	1200 V	-	2500 pF @ 25 V	-	-	D3PAK	-	-	-
APT6013B2LLG MOSFET N-CH 600V 43A T-MAX Microchip Technology	9,543	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	-	130mOhm @ 21.5A, 10V	Through Hole	5V @ 2.5mA	130 nC @ 10 V	600 V	-	5630 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT6013LLLG MOSFET N-CH 600V 43A TO264 Microchip Technology	2,093	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	10V	130mOhm @ 21.5A, 10V	Through Hole	5V @ 2.5mA	130 nC @ 10 V	600 V	±30V	5630 pF @ 25 V	-	-	TO-264 [L]	-	565W (Tc)	-55°C ~ 150°C (TJ)
APT12080LVRG MOSFET N-CH 1200V 16A TO264 Microchip Technology	5,789	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	800mOhm @ 8A, 10V	Through Hole	4V @ 2.5mA	485 nC @ 10 V	1200 V	±30V	7800 pF @ 25 V	-	-	TO-264 (L)	-	520W (Tc)	-55°C ~ 150°C (TJ)
APT56F60B2 MOSFET N-CH 600V 60A T-MAX Microchip Technology	7,323	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	110mOhm @ 28A, 10V	Through Hole	5V @ 2.5mA	280 nC @ 10 V	600 V	±30V	11300 pF @ 25 V	-	-	T-MAX™ [B2]	-	1040W (Tc)	-55°C ~ 150°C (TJ)
APT10050LVFRG MOSFET N-CH 1000V 21A TO264 Microchip Technology	9,103	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	-	500mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	500 nC @ 10 V	1000 V	-	7900 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT10050B2VFRG MOSFET N-CH 1000V 21A T-MAX Microchip Technology	6,737	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	-	500mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	500 nC @ 10 V	1000 V	-	7900 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-

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