Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 29

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT66F60L MOSFET N-CH 600V 70A TO264 Microchip Technology	5,907	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	90mOhm @ 33A, 10V	Through Hole	5V @ 2.5mA	330 nC @ 10 V	600 V	±30V	13190 pF @ 25 V	-	-	TO-264 [L]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT30M36B2FLLG MOSFET N-CH 300V 84A T-MAX Microchip Technology	7,315	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	-	36mOhm @ 42A, 10V	Through Hole	5V @ 2.5mA	115 nC @ 10 V	300 V	-	6480 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT50M75LFLLG MOSFET N-CH 500V 57A TO264 Microchip Technology	2,353	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	-	75mOhm @ 28.5A, 10V	Through Hole	5V @ 2.5mA	125 nC @ 10 V	500 V	-	5590 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT48M80B2 MOSFET N-CH 800V 49A T-MAX Microchip Technology	3,822	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	190mOhm @ 24A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	800 V	±30V	9330 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT20M18B2VRG MOSFET N-CH 200V 100A T-MAX Microchip Technology	4,792	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	18mOhm @ 50A, 10V	Through Hole	4V @ 2.5mA	330 nC @ 10 V	200 V	-	9880 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT20M18LVRG MOSFET N-CH 200V 100A TO264 Microchip Technology	7,804	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	18mOhm @ 50A, 10V	Through Hole	4V @ 2.5mA	330 nC @ 10 V	200 V	-	9880 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT10078BFLLG MOSFET N-CH 1000V 14A TO247 Microchip Technology	9,143	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	-	780mOhm @ 7A, 10V	Through Hole	5V @ 1mA	95 nC @ 10 V	1000 V	-	2525 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT60N60SCSG MOSFET N-CH 600V 60A D3PAK Microchip Technology	8,727	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	45mOhm @ 44A, 10V	Surface Mount	3.9V @ 3mA	190 nC @ 10 V	600 V	±30V	7200 pF @ 25 V	-	-	D3PAK	-	431W (Tc)	-55°C ~ 150°C (TJ)
APT44F80L MOSFET N-CH 800V 47A TO264 Microchip Technology	5,618	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	240mOhm @ 24A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	800 V	±30V	9330 pF @ 25 V	-	-	TO-264	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT40M70LVRG MOSFET N-CH 400V 57A TO264 Microchip Technology	5,776	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	70mOhm @ 28.5A, 10V	Through Hole	4V @ 2.5mA	495 nC @ 10 V	400 V	±30V	8890 pF @ 25 V	-	-	TO-264 (L)	-	520W (Tc)	-55°C ~ 150°C (TJ)

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