Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 30

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT37M100B2 MOSFET N-CH 1000V 37A T-MAX Microchip Technology	4,776	-	询价单	数据表	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	37A (Tc)	10V	330mOhm @ 18A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	1000 V	±30V	9835 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT44F80B2 MOSFET N-CH 800V 47A T-MAX Microchip Technology	9,462	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	210mOhm @ 24A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	800 V	±30V	9330 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT20M22LVFRG MOSFET N-CH 200V 100A TO264 Microchip Technology	7,581	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	22mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	435 nC @ 10 V	200 V	±30V	10200 pF @ 25 V	-	-	TO-264 [L]	-	520W (Tc)	-55°C ~ 150°C (TJ)
APT6015LVFRG MOSFET N-CH 600V 38A TO264 Microchip Technology	7,741	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	-	150mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	475 nC @ 10 V	600 V	-	9000 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT1201R4BFLLG MOSFET N-CH 1200V 9A TO247 Microchip Technology	4,027	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	1.5Ohm @ 4.5A, 10V	Through Hole	5V @ 1mA	75 nC @ 10 V	1200 V	±30V	2030 pF @ 25 V	-	-	TO-247 [B]	-	300W (Tc)	-55°C ~ 150°C (TJ)
APT8030LVRG MOSFET N-CH 800V 27A TO264 Microchip Technology	6,255	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	-	300mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	510 nC @ 10 V	800 V	-	7900 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT34F100B2 MOSFET N-CH 1000V 35A T-MAX Microchip Technology	8,652	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	380mOhm @ 18A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	1000 V	±30V	9835 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT34F100L MOSFET N-CH 1000V 35A TO264 Microchip Technology	6,495	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	400mOhm @ 18A, 10V	Through Hole	5V @ 2.5mA	305 nC @ 10 V	1000 V	±30V	9835 pF @ 25 V	-	-	TO-264 [L]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT50M75B2FLLG MOSFET N-CH 500V 57A T-MAX Microchip Technology	7,531	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	-	75mOhm @ 28.5A, 10V	Through Hole	5V @ 2.5mA	125 nC @ 10 V	500 V	-	5590 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT84F50B2 MOSFET N-CH 500V 84A T-MAX Microchip Technology	9,517	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	10V	65mOhm @ 42A, 10V	Through Hole	5V @ 2.5mA	340 nC @ 10 V	500 V	±30V	13500 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)

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