Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 28

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT5010LVFRG MOSFET N-CH 500V 47A TO264 Microchip Technology	9,571	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	-	100mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	470 nC @ 10 V	500 V	-	8900 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT6021SFLLG MOSFET N-CH 600V 29A D3PAK Microchip Technology	8,626	-	询价单	数据表	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	-	210mOhm @ 14.5A, 10V	Surface Mount	5V @ 1mA	80 nC @ 10 V	600 V	-	3470 pF @ 25 V	-	-	D3PAK	-	-	-
APT20M22LVRG MOSFET N-CH 200V 100A TO264 Microchip Technology	7,582	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	22mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	435 nC @ 10 V	200 V	±30V	10200 pF @ 25 V	-	-	TO-264 [L]	-	520W (Tc)	-55°C ~ 150°C (TJ)
APT1201R6SVFRG MOSFET N-CH 1200V 8A D3PAK Microchip Technology	5,317	-	询价单	数据表	POWER MOS V®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	-	1.6Ohm @ 4A, 10V	Surface Mount	4V @ 1mA	230 nC @ 10 V	1200 V	-	3660 pF @ 25 V	-	-	D3PAK	-	-	-
APT8043SFLLG MOSFET N-CH 800V 20A D3PAK Microchip Technology	8,729	-	询价单	数据表	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	-	430mOhm @ 10A, 10V	Surface Mount	5V @ 1mA	85 nC @ 10 V	800 V	-	2500 pF @ 25 V	-	-	D3PAK	-	-	-
APT10086BVFRG MOSFET N-CH 1000V 13A TO247 Microchip Technology	5,398	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	-	860mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	275 nC @ 10 V	1000 V	-	4440 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT50M75B2LLG MOSFET N-CH 500V 57A T-MAX Microchip Technology	7,723	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	75mOhm @ 28.5A, 10V	Through Hole	5V @ 2.5mA	125 nC @ 10 V	500 V	±30V	5590 pF @ 25 V	-	-	T-MAX™ [B2]	-	570W (Tc)	-55°C ~ 150°C (TJ)
APT50M75LLLG MOSFET N-CH 500V 57A TO264 Microchip Technology	3,955	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	-	75mOhm @ 28.5A, 10V	Through Hole	5V @ 2.5mA	125 nC @ 10 V	500 V	-	5590 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT6015LVRG MOSFET N-CH 600V 38A TO264 Microchip Technology	2,547	-	询价单	数据表	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	-	150mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	475 nC @ 10 V	600 V	-	9000 pF @ 25 V	-	-	TO-264 [L]	-	-	-
APT20M20B2FLLG MOSFET N-CH 200V 100A T-MAX Microchip Technology	4,709	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	-	20mOhm @ 50A, 10V	Through Hole	5V @ 2.5mA	110 nC @ 10 V	200 V	-	6850 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-

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