Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 27

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT8043BLLG MOSFET N-CH 800V 20A TO247 Microchip Technology	3,482	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	-	430mOhm @ 5A, 10V	Through Hole	5V @ 1mA	85 nC @ 10 V	800 V	-	2500 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT5010B2VRG MOSFET N-CH 500V 47A T-MAX Microchip Technology	4,154	-	询价单	数据表	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	-	100mOhm @ 500mA, 10V	Through Hole	4V @ 2.5mA	470 nC @ 10 V	500 V	-	8900 pF @ 25 V	-	-	T-MAX™ [B2]	-	-	-
APT84M50B2 MOSFET N-CH 500V 84A T-MAX Microchip Technology	9,024	-	询价单	数据表	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	10V	65mOhm @ 42A, 10V	Through Hole	5V @ 2.5mA	340 nC @ 10 V	500 V	±30V	13500 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT6021BFLLG MOSFET N-CH 600V 29A TO247 Microchip Technology	9,207	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	-	210mOhm @ 14.5A, 10V	Through Hole	5V @ 1mA	80 nC @ 10 V	600 V	-	3470 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT1201R6BVFRG MOSFET N-CH 1200V 8A TO247 Microchip Technology	3,853	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	-	1.6Ohm @ 4A, 10V	Through Hole	4V @ 1mA	230 nC @ 10 V	1200 V	-	3660 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT24M120L MOSFET N-CH 1200V 24A TO264 Microchip Technology	7,488	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	680mOhm @ 12A, 10V	Through Hole	5V @ 2.5mA	260 nC @ 10 V	1200 V	±30V	8370 pF @ 25 V	-	-	TO-264 [L]	-	1040W (Tc)	-55°C ~ 150°C (TJ)
APT10086BVRG MOSFET N-CH 1000V 13A TO247 Microchip Technology	2,011	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	-	860mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	275 nC @ 10 V	1000 V	-	4440 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT66M60L MOSFET N-CH 600V 70A TO264 Microchip Technology	9,211	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	190mOhm @ 33A, 10V	Through Hole	5V @ 2.5mA	330 nC @ 10 V	600 V	±30V	13190 pF @ 25 V	-	-	TO-264 [L]	-	1135W (Tc)	-55°C ~ 150°C (TJ)
APT8043BFLLG MOSFET N-CH 800V 20A TO247 Microchip Technology	3,667	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	-	430mOhm @ 10A, 10V	Through Hole	5V @ 1mA	85 nC @ 10 V	800 V	-	2500 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT66M60B2 MOSFET N-CH 600V 70A T-MAX Microchip Technology	8,017	-	询价单	数据表	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	100mOhm @ 33A, 10V	Through Hole	5V @ 2.5mA	330 nC @ 10 V	600 V	±30V	13190 pF @ 25 V	-	-	T-MAX™ [B2]	-	1135W (Tc)	-55°C ~ 150°C (TJ)

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