| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT8052BFLLGMOSFET N-CH 800V 15A TO247 Microchip Technology |
8,442 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | - | 520mOhm @ 7.5A, 10V | Through Hole | 5V @ 1mA | 75 nC @ 10 V | 800 V | - | 2035 pF @ 25 V | - | - | TO-247 [B] | - | - | - |
|
APT8056BVRGMOSFET N-CH 800V 16A TO247 Microchip Technology |
3,462 | - |
|
数据表 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | - | 560mOhm @ 500mA, 10V | Through Hole | 4V @ 1mA | 275 nC @ 10 V | 800 V | - | 4440 pF @ 25 V | - | - | TO-247 [B] | - | - | - |
|
|
APT56M60LMOSFET N-CH 600V 60A TO264 Microchip Technology |
5,987 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | Through Hole | 5V @ 2.5mA | 280 nC @ 10 V | 600 V | ±30V | 11300 pF @ 25 V | - | - | TO-264 | - | 1040W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT84F50LMOSFET N-CH 500V 84A TO264 Microchip Technology |
7,974 | - |
|
数据表 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | Through Hole | 5V @ 2.5mA | 340 nC @ 10 V | 500 V | ±30V | 13500 pF @ 25 V | - | - | TO-264 [L] | - | 1135W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT5014SLLGMOSFET N-CH 500V 35A D3PAK Microchip Technology |
9,080 | - |
|
数据表 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | Surface Mount | 5V @ 1mA | 72 nC @ 10 V | 500 V | ±30V | 3261 pF @ 25 V | - | - | D3PAK | - | 403W (Tc) | -55°C ~ 150°C (TJ) |
|
APT10090BFLLGMOSFET N-CH 1000V 12A TO247 Microchip Technology |
3,480 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | Through Hole | 5V @ 1mA | 71 nC @ 10 V | 1000 V | ±30V | 1969 pF @ 25 V | - | - | TO-247 [B] | - | 298W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT30M61SLLG/TRMOSFET N-CH 300V 54A D3PAK Microchip Technology |
3,302 | - |
|
数据表 |
POWER MOS 7® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 10V | 61mOhm @ 27A, 10V | Surface Mount | 5V @ 1mA | 64 nC @ 10 V | 300 V | ±30V | 3720 pF @ 25 V | - | - | D3PAK | - | 403W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT56M60B2MOSFET N-CH 600V 60A TO247 Microchip Technology |
5,442 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | Through Hole | 5V @ 2.5mA | 280 nC @ 10 V | 600 V | ±30V | 11300 pF @ 25 V | - | - | TO-247 [B] | - | 1040W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT75F50LMOSFET N-CH 500V 75A TO264 Microchip Technology |
7,206 | - |
|
数据表 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | Through Hole | 5V @ 2.5mA | 290 nC @ 10 V | 500 V | ±30V | 11600 pF @ 25 V | - | - | TO-264 [L] | - | 1040W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT6025SVRGMOSFET N-CH 600V 25A D3PAK Microchip Technology |
4,974 | - |
|
数据表 |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | - | 250mOhm @ 500mA, 10V | Surface Mount | 4V @ 1mA | 275 nC @ 10 V | 600 V | - | 5160 pF @ 25 V | - | - | D3PAK | - | - | - |