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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT8052BFLLG

APT8052BFLLG

MOSFET N-CH 800V 15A TO247

Microchip Technology

8,442 -
APT8052BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) - 520mOhm @ 7.5A, 10V Through Hole 5V @ 1mA 75 nC @ 10 V 800 V - 2035 pF @ 25 V - - TO-247 [B] - - -
APT8056BVRG

APT8056BVRG

MOSFET N-CH 800V 16A TO247

Microchip Technology

3,462 -
APT8056BVRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) - 560mOhm @ 500mA, 10V Through Hole 4V @ 1mA 275 nC @ 10 V 800 V - 4440 pF @ 25 V - - TO-247 [B] - - -
APT56M60L

APT56M60L

MOSFET N-CH 600V 60A TO264

Microchip Technology

5,987 -
APT56M60L

数据表

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 130mOhm @ 28A, 10V Through Hole 5V @ 2.5mA 280 nC @ 10 V 600 V ±30V 11300 pF @ 25 V - - TO-264 - 1040W (Tc) -55°C ~ 150°C (TJ)
APT84F50L

APT84F50L

MOSFET N-CH 500V 84A TO264

Microchip Technology

7,974 -
APT84F50L

数据表

POWER MOS 8™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 10V 65mOhm @ 42A, 10V Through Hole 5V @ 2.5mA 340 nC @ 10 V 500 V ±30V 13500 pF @ 25 V - - TO-264 [L] - 1135W (Tc) -55°C ~ 150°C (TJ)
APT5014SLLG

APT5014SLLG

MOSFET N-CH 500V 35A D3PAK

Microchip Technology

9,080 -
APT5014SLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 140mOhm @ 17.5A, 10V Surface Mount 5V @ 1mA 72 nC @ 10 V 500 V ±30V 3261 pF @ 25 V - - D3PAK - 403W (Tc) -55°C ~ 150°C (TJ)
APT10090BFLLG

APT10090BFLLG

MOSFET N-CH 1000V 12A TO247

Microchip Technology

3,480 -
APT10090BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 950mOhm @ 6A, 10V Through Hole 5V @ 1mA 71 nC @ 10 V 1000 V ±30V 1969 pF @ 25 V - - TO-247 [B] - 298W (Tc) -55°C ~ 150°C (TJ)
APT30M61SLLG/TR

APT30M61SLLG/TR

MOSFET N-CH 300V 54A D3PAK

Microchip Technology

3,302 -
APT30M61SLLG/TR

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54A (Tc) 10V 61mOhm @ 27A, 10V Surface Mount 5V @ 1mA 64 nC @ 10 V 300 V ±30V 3720 pF @ 25 V - - D3PAK - 403W (Tc) -55°C ~ 150°C (TJ)
APT56M60B2

APT56M60B2

MOSFET N-CH 600V 60A TO247

Microchip Technology

5,442 -
APT56M60B2

数据表

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 130mOhm @ 28A, 10V Through Hole 5V @ 2.5mA 280 nC @ 10 V 600 V ±30V 11300 pF @ 25 V - - TO-247 [B] - 1040W (Tc) -55°C ~ 150°C (TJ)
APT75F50L

APT75F50L

MOSFET N-CH 500V 75A TO264

Microchip Technology

7,206 -
APT75F50L

数据表

POWER MOS 8™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 75mOhm @ 37A, 10V Through Hole 5V @ 2.5mA 290 nC @ 10 V 500 V ±30V 11600 pF @ 25 V - - TO-264 [L] - 1040W (Tc) -55°C ~ 150°C (TJ)
APT6025SVRG

APT6025SVRG

MOSFET N-CH 600V 25A D3PAK

Microchip Technology

4,974 -
APT6025SVRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) - 250mOhm @ 500mA, 10V Surface Mount 4V @ 1mA 275 nC @ 10 V 600 V - 5160 pF @ 25 V - - D3PAK - - -
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