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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT34M60S/TR

APT34M60S/TR

MOSFET N-CH 600V 36A D3PAK

Microchip Technology

7,817 -
APT34M60S/TR

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 190mOhm @ 17A, 10V Surface Mount 5V @ 1mA 165 nC @ 10 V 600 V ±30V 6640 pF @ 25 V - - D3PAK - 624W (Tc) -55°C ~ 150°C (TJ)
APT6025BFLLG

APT6025BFLLG

MOSFET N-CH 600V 24A TO247

Microchip Technology

5,702 -
APT6025BFLLG

数据表

POWER MOS 7® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 24A (Tc) - 250mOhm @ 12A, 10V Through Hole 5V @ 1mA 65 nC @ 10 V 600 V - 2910 pF @ 25 V - - TO-247 [B] - - -
APT8052BLLG

APT8052BLLG

MOSFET N-CH 800V 15A TO247

Microchip Technology

2,424 -
APT8052BLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) - 520mOhm @ 7.5A, 10V Through Hole 5V @ 1mA 75 nC @ 10 V 800 V - 2035 pF @ 25 V - - TO-247 [B] - - -
APT84M50L

APT84M50L

MOSFET N-CH 500V 84A TO264

Microchip Technology

5 -
APT84M50L

数据表

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 10V 65mOhm @ 42A, 10V Through Hole 5V @ 2.5mA 340 nC @ 10 V 500 V ±30V 13500 pF @ 25 V - - TO-264 - 1135W (Tc) -55°C ~ 150°C (TJ)
APT1001RSVRG

APT1001RSVRG

MOSFET N-CH 1000V 11A D3PAK

Microchip Technology

5,682 -
APT1001RSVRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) - 1Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 225 nC @ 10 V 1000 V - 3660 pF @ 25 V - - D3PAK - - -
APT1001RBVFRG

APT1001RBVFRG

MOSFET N-CH 1000V 11A TO247

Microchip Technology

7,297 -
APT1001RBVFRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) - 1Ohm @ 5.5A, 10V Through Hole 4V @ 1mA 150 nC @ 10 V 1000 V - 3050 pF @ 25 V - - TO-247 [B] - - -
APT22F120L

APT22F120L

MOSFET N-CH 1200V 23A TO264

Microchip Technology

8,250 -
APT22F120L

数据表

POWER MOS 8™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 700mOhm @ 12A, 10V Through Hole 5V @ 2.5mA 260 nC @ 10 V 1200 V ±30V 8370 pF @ 25 V - - TO-264 [L] - 1040W (Tc) -55°C ~ 150°C (TJ)
APT34F60S/TR

APT34F60S/TR

MOSFET N-CH 600V 36A D3PAK

Microchip Technology

4,056 -
APT34F60S/TR

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 190mOhm @ 17A, 10V Surface Mount 5V @ 1mA 165 nC @ 10 V 600 V ±30V 6640 pF @ 25 V - - D3PAK - 624W (Tc) -55°C ~ 150°C (TJ)
APT30M70BVFRG

APT30M70BVFRG

MOSFET N-CH 300V 48A TO247

Microchip Technology

8,812 -
APT30M70BVFRG

数据表

POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 70mOhm @ 500mA, 10V Through Hole 4V @ 1mA 225 nC @ 10 V 300 V ±30V 5870 pF @ 25 V - - TO-247 [B] - 370W (Tc) -55°C ~ 150°C (TJ)
APT20M34SLLG/TR

APT20M34SLLG/TR

MOSFET N-CH 200V 74A D3PAK

Microchip Technology

8,934 -
APT20M34SLLG/TR

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 74A (Tc) 10V 34mOhm @ 37A, 10V Surface Mount 5V @ 1mA 60 nC @ 10 V 200 V ±30V 3660 pF @ 25 V - - D3PAK - 403W (Tc) -55°C ~ 150°C (TJ)
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