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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT8065SVRG

APT8065SVRG

MOSFET N-CH 800V 13A D3PAK

Microchip Technology

8,638 -
APT8065SVRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) - 650mOhm @ 500mA, 10V Surface Mount 4V @ 1mA 225 nC @ 10 V 800 V - 3700 pF @ 25 V - - D3PAK - - -
APT6029SLLG

APT6029SLLG

MOSFET N-CH 600V 21A D3PAK

Microchip Technology

6,442 -
APT6029SLLG

数据表

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) - 290mOhm @ 10.5A, 10V Surface Mount 5V @ 1mA 65 nC @ 10 V 600 V - 2615 pF @ 25 V - - D3PAK - - -
APT20M34BLLG

APT20M34BLLG

MOSFET N-CH 200V 74A TO247

Microchip Technology

7,053 -
APT20M34BLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 74A (Tc) - 34mOhm @ 37A, 10V Through Hole 5V @ 1mA 60 nC @ 10 V 200 V - 3660 pF @ 25 V - - TO-247 [B] - - -
APT5014BFLLG

APT5014BFLLG

MOSFET N-CH 500V 35A TO247

Microchip Technology

3,547 -
APT5014BFLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) - 140mOhm @ 17.5A, 10V Through Hole 5V @ 1mA 72 nC @ 10 V 500 V - 3261 pF @ 25 V - - TO-247 [B] - - -
APT41M80L

APT41M80L

MOSFET N-CH 800V 43A TO264

Microchip Technology

2,677 -
APT41M80L

数据表

POWER MOS 8™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 210mOhm @ 20A, 10V Through Hole 5V @ 2.5mA 260 nC @ 10 V 800 V ±30V 8070 pF @ 25 V - - TO-264 [L] - 1040W (Tc) -55°C ~ 150°C (TJ)
APT10M19SVFRG

APT10M19SVFRG

MOSFET N-CH 100V 75A D3PAK

Microchip Technology

6,690 -
APT10M19SVFRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) - 19mOhm @ 37.5A, 10V Surface Mount 4V @ 1mA 300 nC @ 10 V 100 V - 6120 pF @ 25 V - - D3PAK - - -
APT6025BLLG

APT6025BLLG

MOSFET N-CH 600V 24A TO247

Microchip Technology

8,617 -
APT6025BLLG

数据表

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) - 250mOhm @ 12A, 10V Through Hole 5V @ 1mA 65 nC @ 10 V 600 V - 2910 pF @ 25 V - - TO-247 [B] - - -
APT5015SVFRG

APT5015SVFRG

MOSFET N-CH 500V 32A D3PAK

Microchip Technology

8,033 -
APT5015SVFRG

数据表

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 150mOhm @ 16A, 10V Surface Mount 4V @ 1mA 300 nC @ 10 V 500 V ±30V 5280 pF @ 25 V - - D3PAK - 370W (Tc) -55°C ~ 150°C (TJ)
APT77N60SC6

APT77N60SC6

MOSFET N-CH 600V 77A D3PAK

Microchip Technology

4,418 -
APT77N60SC6

数据表

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 77A (Tc) 10V 41mOhm @ 44.4A, 10V Surface Mount 3.6V @ 2.96mA 260 nC @ 10 V 600 V ±20V 13600 pF @ 25 V - - D3PAK - 481W (Tc) -55°C ~ 150°C (TJ)
APT47N60SC3G

APT47N60SC3G

MOSFET N-CH 600V 47A D3PAK

Microchip Technology

2,303 -
APT47N60SC3G

数据表

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 70mOhm @ 30A, 10V Surface Mount 3.9V @ 2.7mA 260 nC @ 10 V 600 V ±20V 7015 pF @ 25 V - - D3PAK - 417W (Tc) -55°C ~ 150°C (TJ)
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