Microchip Technology|场效应晶体管（FETs）、MOSFETs - 页 22

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
APT5017BVFRG MOSFET N-CH 500V 30A TO247 Microchip Technology	5,592	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	-	170mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	300 nC @ 10 V	500 V	-	5280 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT56F50L MOSFET N-CH 500V 56A TO264 Microchip Technology	7,324	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	100mOhm @ 28A, 10V	Through Hole	5V @ 2.5mA	220 nC @ 10 V	500 V	±30V	8800 pF @ 25 V	-	-	TO-264 [L]	-	780W (Tc)	-55°C ~ 150°C (TJ)
APT1201R4BLLG MOSFET N-CH 1200V 9A TO247 Microchip Technology	7,515	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	1.4Ohm @ 4.5A, 10V	Through Hole	5V @ 1mA	120 nC @ 10 V	1200 V	±30V	2500 pF @ 25 V	-	-	TO-247-3	-	300W (Tc)	-55°C ~ 150°C (TJ)
APT20M45SVFRG MOSFET N-CH 200V 56A D3PAK Microchip Technology	6,787	-	询价单	数据表	POWER MOS V®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	-	45mOhm @ 500mA, 10V	Surface Mount	4V @ 1mA	195 nC @ 10 V	200 V	-	4860 pF @ 25 V	-	-	D3PAK	-	-	-
APT6029BFLLG MOSFET N-CH 600V 21A TO247 Microchip Technology	5,138	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	-	290mOhm @ 10.5A, 10V	Through Hole	5V @ 1mA	65 nC @ 10 V	600 V	-	2615 pF @ 25 V	-	-	TO-247 [B]	-	300W (Tc)	-55°C ~ 150°C (TJ)
APT5017SVRG MOSFET N-CH 500V 30A D3PAK Microchip Technology	2,444	-	询价单	数据表	POWER MOS V®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	-	170mOhm @ 500mA, 10V	Surface Mount	4V @ 1mA	300 nC @ 10 V	500 V	-	5280 pF @ 25 V	-	-	D3PAK	-	-	-
APT47N60BC3G MOSFET N-CH 600V 47A TO247 Microchip Technology	1	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	70mOhm @ 30A, 10V	Through Hole	3.9V @ 2.7mA	260 nC @ 10 V	600 V	±20V	7015 pF @ 25 V	-	-	TO-247 [B]	-	417W (Tc)	-55°C ~ 150°C (TJ)
APT8065BVFRG MOSFET N-CH 800V 13A TO247 Microchip Technology	8,465	-	询价单	数据表	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	-	650mOhm @ 500mA, 10V	Through Hole	4V @ 1mA	225 nC @ 10 V	800 V	-	3700 pF @ 25 V	-	-	TO-247 [B]	-	-	-
APT24M120B2 MOSFET N-CH 1200V 24A T-MAX Microchip Technology	2	-	询价单	数据表	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	630mOhm @ 12A, 10V	Through Hole	5V @ 2.5mA	260 nC @ 10 V	1200 V	±30V	8370 pF @ 25 V	-	-	T-MAX™ [B2]	-	1040W (Tc)	-55°C ~ 150°C (TJ)
APT29F100L MOSFET N-CH 1000V 30A TO264 Microchip Technology	4,104	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	460mOhm @ 16A, 10V	Through Hole	5V @ 2.5mA	260 nC @ 10 V	1000 V	±30V	8500 pF @ 25 V	-	-	TO-264	-	1040W (Tc)	-55°C ~ 150°C (TJ)

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