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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRL3705N

AUIRL3705N

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier

22,792 -
AUIRL3705N

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 89A (Tc) - 10mOhm @ 46A, 10V Through Hole 2V @ 250µA 98 nC @ 5 V 55 V - 3600 pF @ 25 V - - TO-220AB - 170W (Tc) -55°C ~ 175°C (TJ)
IRF430

IRF430

500V, N-CHANNEL REPETITIVE AVALA

International Rectifier

6,570 -
IRF430

数据表

HEXFET® TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.8Ohm @ 4.5A, 10V Through Hole 4V @ 250µA 40 nC @ 10 V 500 V ±20V 610 pF @ 25 V - - TO-204AA (TO-3) - 75W (Tc) -55°C ~ 150°C (TJ)
AUIRFR8405TRL

AUIRFR8405TRL

MOSFET N-CH 40V 100A DPAK

International Rectifier

2,293 -
AUIRFR8405TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 1.98mOhm @ 90A, 10V Surface Mount 3.9V @ 100µA 155 nC @ 10 V 40 V ±20V 5171 pF @ 25 V - - DPAK - 163W (Tc) -55°C ~ 175°C (TJ)
AUIRF3415

AUIRF3415

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

300 -
AUIRF3415

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 42mOhm @ 22A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 150 V ±20V 2400 pF @ 25 V - - TO-220AB - 200W (Tc) -55°C ~ 175°C (TJ)
AUIRF1404ZS

AUIRF1404ZS

MOSFET N-CH 40V 160A D2PAK

International Rectifier

993 -
AUIRF1404ZS

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 3.7mOhm @ 75A, 10V Surface Mount 4V @ 250µA 150 nC @ 10 V 40 V ±20V 4340 pF @ 25 V - - D2PAK - 200W (Tc) -55°C ~ 175°C (TJ)
AUIRFSL6535

AUIRFSL6535

MOSFET N-CH 300V 19A TO262-3-901

International Rectifier

13,872 -
AUIRFSL6535

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 185mOhm @ 11A, 10V Through Hole 5V @ 150µA 57 nC @ 10 V 300 V ±20V 2340 pF @ 25 V AEC-Q101 - PG-TO262-3-901 Automotive 210W (Tc) -55°C ~ 175°C (TJ)
AUIRF1405ZL-308

AUIRF1405ZL-308

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

22,300 -
AUIRF1405ZL-308

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 4.9mOhm @ 75A, 10V Through Hole 4V @ 250µA 180 nC @ 10 V 55 V ±20V 4780 pF @ 25 V AEC-Q101 - TO-262 Automotive 230W (Tc) -55°C ~ 175°C (TJ)
IRFF9233

IRFF9233

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier

289 -
IRFF9233

数据表

- TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 3.5A - - Through Hole - - 150 V - - - - TO-205AF (TO-39) - 25W -
AUIRFB4610

AUIRFB4610

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

14,961 -
AUIRFB4610

数据表

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 73A (Tc) 10V 14mOhm @ 44A, 10V Through Hole 4V @ 100µA 140 nC @ 10 V 100 V ±20V 3550 pF @ 50 V - - TO-220AB - 190W (Tc) -55°C ~ 175°C (TJ)
AUIRFSL8408

AUIRFSL8408

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

1,435 -
AUIRFSL8408

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 195A (Tc) - 1.6mOhm @ 100A, 10V Through Hole 3.9V @ 250µA 324 nC @ 10 V 40 V - 10820 pF @ 25 V - - TO-262 - 294W (Tc) -55°C ~ 175°C (TJ)
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