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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFZ44V

AUIRFZ44V

MOSFET N-CH 60V 55A TO220AB

International Rectifier

10,350 -
AUIRFZ44V

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) - 16.5mOhm @ 31A, 10V Through Hole 4V @ 250µA 67 nC @ 10 V 60 V - 1812 pF @ 25 V - - TO-220AB - 115W (Tc) -55°C ~ 175°C (TJ)
AUIRFU8403-701TRL

AUIRFU8403-701TRL

AUTOMOTIVE HEXFET POWER MOSFET

International Rectifier

7,680 -
AUIRFU8403-701TRL

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.1mOhm @ 76A, 10V Through Hole 3.9V @ 100µA 99 nC @ 10 V 40 V ±20V 3171 pF @ 25 V AEC-Q101 - PG-TO251-3-901 Automotive 99W (Tc) -55°C ~ 175°C (TJ)
IRF7483MTRPBF

IRF7483MTRPBF

MOSFET N-CH 40V 135A DIRECTFET

International Rectifier

12,511 -
IRF7483MTRPBF

数据表

StrongIRFET™ DirectFET™ Isometric MF Bulk Active N-Channel MOSFET (Metal Oxide) 135A (Tc) 6V, 10V 2.3mOhm @ 81A, 10V Surface Mount 3.9V @ 100µA 81 nC @ 10 V 40 V ±20V 3913 pF @ 25 V - - DirectFET™ Isometric MF - 74W (Tc) -55°C ~ 150°C (TJ)
IRL6283MTRPBF

IRL6283MTRPBF

DIRECTFET N-CHANNEL POWER MOSFET

International Rectifier

4,800 -
IRL6283MTRPBF

数据表

HEXFET®, StrongIRFET™ DirectFET™ Isometric MD Bulk Active N-Channel MOSFET (Metal Oxide) 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V Surface Mount 1.1V @ 100µA 158 nC @ 4.5 V 20 V ±12V 8292 pF @ 10 V - - DIRECTFET™ MD - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ)
IRF234

IRF234

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

589 -
IRF234

数据表

- TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 8.4A - - Through Hole - - 250 V - - - - TO-204AA (TO-3) - 74W -
AUIRFU8405

AUIRFU8405

MOSFET N-CH 40V 100A I-PAK

International Rectifier

510 -
AUIRFU8405

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 1.98mOhm @ 90A, 10V Through Hole 3.9V @ 100µA 155 nC @ 10 V 40 V ±20V 5171 pF @ 25 V - - IPAK - 163W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2905ZTR

AUIRFR2905ZTR

MOSFET N-CH 55V 42A DPAK

International Rectifier

10,000 -
AUIRFR2905ZTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 42A (Tc) - 14.5mOhm @ 36A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 55 V ±20V 1380 pF @ 25 V AEC-Q101 - DPAK Automotive 110W (Tc) -55°C ~ 175°C (TJ)
AUIRF9540N

AUIRF9540N

AUTOMOTIVE POWER MOSFET

International Rectifier

4,810 -
AUIRF9540N

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 23A (Tc) 10V 117mOhm @ 11A, 10V Through Hole 4V @ 250µA 97 nC @ 10 V 100 V ±20V 1300 pF @ 25 V AEC-Q101 - TO-220 Automotive 140W (Tc) -55°C ~ 175°C (TJ)
AUIRFR3504

AUIRFR3504

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

10,141 -
AUIRFR3504

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 9.2mOhm @ 30A, 10V Surface Mount 4V @ 250µA 71 nC @ 10 V 40 V ±20V 2150 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
IRF6713STRPBF

IRF6713STRPBF

MOSFET N-CH 25V 22A/95A DIRECTFT

International Rectifier

2,745 -
IRF6713STRPBF

数据表

DirectFET™ DirectFET™ Isometric SQ Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 95A (Tc) - 3mOhm @ 22A, 10V Surface Mount 2.4V @ 50µA 32 nC @ 4.5 V 25 V ±20V 2880 pF @ 13 V - - DirectFET™ Isometric SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
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