| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPU075N03L GMOSFET N-CH 30V 50A TO251-3 Infineon Technologies |
3,246 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | Through Hole | 2.2V @ 250µA | 18 nC @ 10 V | 30 V | ±20V | 1900 pF @ 15 V | - | - | PG-TO251-3-21 | - | 47W (Tc) | -55°C ~ 175°C (TJ) |
|
IPC020N10L3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
4,992 | - |
|
数据表 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | Surface Mount | 2.1V @ 12µA | - | 100 V | - | - | - | - | Sawn on foil | - | - | - |
|
IPD06P005NSAUMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
3,008 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | Surface Mount | 4V @ 270µA | 10.6 nC @ 10 V | 60 V | ±20V | 420 pF @ 30 V | - | - | PG-TO252-3-313 | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
|
BSS192PE6327TMOSFET P-CH 250V 190MA SOT89 Infineon Technologies |
8,527 | - |
|
数据表 |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | Surface Mount | 2V @ 130µA | 6.1 nC @ 10 V | 250 V | ±20V | 104 pF @ 25 V | - | - | PG-SOT89 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SPD09P06PLMOSFET P-CH 60V 9.7A TO252-3 Infineon Technologies |
9,582 | - |
|
数据表 |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | Surface Mount | 2V @ 250µA | 21 nC @ 10 V | 60 V | ±20V | 450 pF @ 25 V | - | - | PG-TO252-3 | - | 42W (Tc) | -55°C ~ 175°C (TJ) |
|
BSS138NL6327HTSA1MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
7,094 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | Surface Mount | 1.4V @ 250µA | 1.4 nC @ 10 V | 60 V | ±20V | 41 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
SN7002N L6327MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
4,723 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 1.8V @ 26µA | 1.5 nC @ 10 V | 60 V | ±20V | 45 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
IPS040N03LGAKMA1MOSFET N-CH 30V 90A TO251-3 Infineon Technologies |
5,847 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | Through Hole | 2.2V @ 250µA | 38 nC @ 10 V | 30 V | - | 3900 pF @ 15 V | - | - | PG-TO251-3-11 | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
BSP320SH6433XTMA1MOSFET N-CH 60V 2.9A SOT223 Infineon Technologies |
5,933 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.9A (Tj) | 10V | 120mOhm @ 2.9A, 10V | Surface Mount | 4V @ 20µA | 9.3 nC @ 7 V | 60 V | ±20V | 340 pF @ 25 V | - | - | SOT-223 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7526D1PBFMOSFET P-CH 30V 2A MICRO8 Infineon Technologies |
4,092 | - |
|
数据表 |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | Surface Mount | 1V @ 250µA | 11 nC @ 10 V | 30 V | ±20V | 180 pF @ 25 V | - | Schottky Diode (Isolated) | Micro8™ | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |