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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPU075N03L G

IPU075N03L G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies

3,246 -
IPU075N03L G

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 18 nC @ 10 V 30 V ±20V 1900 pF @ 15 V - - PG-TO251-3-21 - 47W (Tc) -55°C ~ 175°C (TJ)
IPC020N10L3X1SA1

IPC020N10L3X1SA1

MOSFET N-CH 100V 1A SAWN ON FOIL

Infineon Technologies

4,992 -
IPC020N10L3X1SA1

数据表

OptiMOS™ Die Bulk Active N-Channel MOSFET (Metal Oxide) 1A (Tj) 4.5V 100mOhm @ 2A, 4.5V Surface Mount 2.1V @ 12µA - 100 V - - - - Sawn on foil - - -
IPD06P005NSAUMA1

IPD06P005NSAUMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies

3,008 -
IPD06P005NSAUMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 250mOhm @ 6.5A, 10V Surface Mount 4V @ 270µA 10.6 nC @ 10 V 60 V ±20V 420 pF @ 30 V - - PG-TO252-3-313 - 28W (Tc) -55°C ~ 175°C (TJ)
BSS192PE6327T

BSS192PE6327T

MOSFET P-CH 250V 190MA SOT89

Infineon Technologies

8,527 -
BSS192PE6327T

数据表

SIPMOS® TO-243AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 190mA (Ta) 2.8V, 10V 12Ohm @ 190mA, 10V Surface Mount 2V @ 130µA 6.1 nC @ 10 V 250 V ±20V 104 pF @ 25 V - - PG-SOT89 - 1W (Ta) -55°C ~ 150°C (TJ)
SPD09P06PL

SPD09P06PL

MOSFET P-CH 60V 9.7A TO252-3

Infineon Technologies

9,582 -
SPD09P06PL

数据表

SIPMOS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 9.7A (Tc) 4.5V, 10V 250mOhm @ 6.8A, 10V Surface Mount 2V @ 250µA 21 nC @ 10 V 60 V ±20V 450 pF @ 25 V - - PG-TO252-3 - 42W (Tc) -55°C ~ 175°C (TJ)
BSS138NL6327HTSA1

BSS138NL6327HTSA1

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies

7,094 -
BSS138NL6327HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 230mA (Ta) 4.5V, 10V 3.5Ohm @ 230mA, 10V Surface Mount 1.4V @ 250µA 1.4 nC @ 10 V 60 V ±20V 41 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
SN7002N L6327

SN7002N L6327

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies

4,723 -
SN7002N L6327

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 1.8V @ 26µA 1.5 nC @ 10 V 60 V ±20V 45 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
IPS040N03LGAKMA1

IPS040N03LGAKMA1

MOSFET N-CH 30V 90A TO251-3

Infineon Technologies

5,847 -
IPS040N03LGAKMA1

数据表

OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 38 nC @ 10 V 30 V - 3900 pF @ 15 V - - PG-TO251-3-11 - 79W (Tc) -55°C ~ 175°C (TJ)
BSP320SH6433XTMA1

BSP320SH6433XTMA1

MOSFET N-CH 60V 2.9A SOT223

Infineon Technologies

5,933 -
BSP320SH6433XTMA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.9A (Tj) 10V 120mOhm @ 2.9A, 10V Surface Mount 4V @ 20µA 9.3 nC @ 7 V 60 V ±20V 340 pF @ 25 V - - SOT-223 - 1.8W (Ta) -55°C ~ 150°C (TJ)
IRF7526D1PBF

IRF7526D1PBF

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies

4,092 -
IRF7526D1PBF

数据表

FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V Surface Mount 1V @ 250µA 11 nC @ 10 V 30 V ±20V 180 pF @ 25 V - Schottky Diode (Isolated) Micro8™ - 1.25W (Ta) -55°C ~ 150°C (TJ)
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