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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9321TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
2,720 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | Surface Mount | 2.4V @ 50µA | 98 nC @ 10 V | 30 V | ±20V | 2590 pF @ 25 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SPP11N60S5XKSA1LOW POWER_LEGACY Infineon Technologies |
6,833 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | Through Hole | 5.5V @ 500µA | 54 nC @ 10 V | 600 V | ±20V | 1460 pF @ 25 V | - | - | PG-TO220-3-1 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
BSC020N03LSGATMA2LV POWER MOS Infineon Technologies |
4,242 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPB50N12S3L15ATMA1MOSFET N-CHANNEL_100+ Infineon Technologies |
6,711 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | Surface Mount | 2.4V @ 60µA | 57 nC @ 10 V | 120 V | ±20V | 4180 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPB70N12S3L12ATMA1MOSFET N-CHANNEL_100+ Infineon Technologies |
2,832 | - |
|
数据表 |
OptiMOS™ T | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | Surface Mount | 2.4V @ 83µA | 77 nC @ 10 V | 120 V | ±20V | 5550 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD70N12S3L12ATMA1MOSFET N-CHANNEL_100+ Infineon Technologies |
8,025 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | Surface Mount | 2.4V @ 83µA | 77 nC @ 10 V | 120 V | ±20V | 5550 pF @ 25 V | AEC-Q101 | - | PG-TO252-3-11 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPC302N15N3X7SA1MV POWER MOS Infineon Technologies |
5,629 | - |
|
数据表 |
OptiMOS™ 3 | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | - | 10V | 100mOhm @ 2A, 10V | Surface Mount | 4V @ 270µA | - | 150 V | - | - | - | - | Die | - | - | - |
|
|
IPT043N15N5ATMA1MV POWER MOS Infineon Technologies |
2,070 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSP612PH6327XTSA1SMALL SIGNAL+P-CH Infineon Technologies |
7,464 | - |
|
数据表 |
OptiMOS™ | - | Tape & Reel (TR) | Obsolete | - | - | 3A (Ta) | - | - | - | - | - | - | - | - | AEC-Q101 | - | - | Automotive | - | - |
|
BSP316PE6327TMOSFET P-CH 100V 680MA SOT223-4 Infineon Technologies |
7,829 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | Surface Mount | 2V @ 170µA | 6.4 nC @ 10 V | 100 V | ±20V | 146 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
