Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 632

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPSA70R2K0CEAKMA1 MOSFET N-CH 700V 4A TO251-3 Infineon Technologies	8,285	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2Ohm @ 1A, 10V	Through Hole	3.5V @ 70µA	7.8 nC @ 10 V	700 V	±20V	163 pF @ 100 V	-	-	PG-TO251-3	-	42W (Tc)	-40°C ~ 150°C (TJ)
IPD06P005LSAUMA1 MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies	9,917	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.5A (Tc)	4.5V, 10V	250mOhm @ 6.5A, 10V	Surface Mount	2V @ 270µA	13.8 nC @ 10 V	60 V	±20V	420 pF @ 30 V	-	-	PG-TO252-3-313	-	28W (Tc)	-55°C ~ 175°C (TJ)
IPD060N03LGBTMA1 MOSFET N-CH 30V 50A TO252-3 Infineon Technologies	3,951	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	6mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	30 nC @ 10 V	30 V	±20V	2300 pF @ 15 V	-	-	PG-TO252-3	-	56W (Tc)	-55°C ~ 175°C (TJ)
IPD65R1K0CEAUMA1 MOSFET N-CH 650V 7.2A TO252-3 Infineon Technologies	5,260	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.2A (Tc)	10V	1Ohm @ 1.5A, 10V	Surface Mount	3.5V @ 200µA	15.3 nC @ 10 V	650 V	±20V	328 pF @ 100 V	-	-	PG-TO252-3	-	68W (Tc)	-55°C ~ 150°C (TJ)
BSS87E6327T MOSFET N-CH 240V 260MA SOT89-4 Infineon Technologies	8,061	-	询价单	数据表	SIPMOS®	TO-243AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	260mA (Ta)	4.5V, 10V	6Ohm @ 260mA, 10V	Surface Mount	1.8V @ 108µA	5.5 nC @ 10 V	240 V	±20V	97 pF @ 25 V	-	-	PG-SOT89-4-2	-	1W (Ta)	-55°C ~ 150°C (TJ)
IPU60R1K0CEAKMA2 MOSFET N-CH 600V 4.3A TO251-3 Infineon Technologies	3,282	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1Ohm @ 1.5A, 10V	Through Hole	3.5V @ 130µA	13 nC @ 10 V	600 V	±20V	280 pF @ 100 V	-	-	PG-TO251-3	-	61W (Tc)	-40°C ~ 150°C (TJ)
BSP615S2L MOSFET N-CH 55V 2.8A SOT223-4 Infineon Technologies	9,332	-	询价单	数据表	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.8A (Ta)	4.5V, 10V	90mOhm @ 1.4A, 10V	Surface Mount	2V @ 12µA	10 nC @ 10 V	55 V	±20V	330 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSS123L6327HTSA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	5,825	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	Surface Mount	1.8V @ 50µA	2.67 nC @ 10 V	100 V	±20V	69 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
BSS123L6433HTMA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	6,353	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	Surface Mount	1.8V @ 50µA	2.67 nC @ 10 V	100 V	±20V	69 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IPU80R3K3P7AKMA1 MOSFET N-CH 800V 1.9A TO251-3 Infineon Technologies	7,085	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.9A (Tc)	10V	3.3Ohm @ 590mA, 10V	Through Hole	3.5V @ 30µA	5.8 nC @ 10 V	800 V	±20V	120 pF @ 500 V	-	-	PG-TO251-3	-	18W (Tc)	-55°C ~ 150°C (TJ)

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