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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPC90R1K0C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
6,624 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC90R1K2C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
8,256 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC90R500C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,406 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC90R800C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
6,262 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SISC097N24DX1SA1TRANSISTOR P-CH BARE DIE Infineon Technologies |
3,095 | - |
|
数据表 |
- | - | Bulk | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC302N08N3X2SA1MOSFET N-CH 80V SAWN WAFER Infineon Technologies |
2,690 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPD65R1K5CEAUMA1MOSFET N-CH 700V 5.2A TO252-3 Infineon Technologies |
2,163 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | Surface Mount | 3.5V @ 100µA | 10.5 nC @ 10 V | 700 V | ±20V | 225 pF @ 100 V | - | - | PG-TO252-3 | - | 53W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IPN70R1K0CEATMA1MOSFET N-CH 700V 7.4A SOT223 Infineon Technologies |
8,748 | - |
|
数据表 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.4A (Tc) | 10V | 1Ohm @ 1.5A, 10V | Surface Mount | 3.5V @ 150µA | 14.9 nC @ 10 V | 700 V | ±20V | 328 pF @ 100 V | - | - | PG-SOT223 | - | 5W (Tc) | -40°C ~ 150°C (TJ) |
|
IPS65R650CEAKMA1MOSFET N-CH 700V 10.1A TO251-3 Infineon Technologies |
3,250 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | Through Hole | 3.5V @ 210µA | 23 nC @ 10 V | 700 V | ±20V | 440 pF @ 100 V | - | - | PG-TO251-3 | - | 86W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IPSA70R1K4CEAKMA1MOSFET N-CH 700V 5.4A TO251-3 Infineon Technologies |
4,007 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | Through Hole | 3.5V @ 100µA | 10.5 nC @ 10 V | 700 V | ±20V | 225 pF @ 100 V | - | - | PG-TO251-3 | - | 53W (Tc) | -40°C ~ 150°C (TJ) |
