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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPP20N60S5HKSA1HIGH POWER_LEGACY Infineon Technologies |
9,742 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | Through Hole | 5.5V @ 1mA | 103 nC @ 10 V | 600 V | ±20V | 3000 pF @ 25 V | - | - | PG-TO220-3-1 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD50R399CPBTMA1LOW POWER_LEGACY Infineon Technologies |
4,251 | - |
|
数据表 |
CoolMOS™ CP | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | Surface Mount | 3.5V @ 330µA | 23 nC @ 10 V | 500 V | ±20V | 890 pF @ 100 V | - | - | PG-TO252-3-313 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD50R520CPATMA1LOW POWER_LEGACY Infineon Technologies |
6,030 | - |
|
数据表 |
CoolMOS™ CP | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | Surface Mount | 3.5V @ 250µA | 17 nC @ 10 V | 500 V | ±20V | 680 pF @ 100 V | - | - | PG-TO252-3-313 | - | 66W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD65R600C6ATMA1LOW POWER_LEGACY Infineon Technologies |
7,399 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | Surface Mount | 3.5V @ 210µA | 23 nC @ 10 V | 650 V | ±20V | 440 pF @ 100 V | - | - | PG-TO252-3-313 | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP04N50C3XKSA1LOW POWER_LEGACY Infineon Technologies |
8,903 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | Through Hole | 3.9V @ 200µA | 22 nC @ 10 V | 560 V | ±20V | 470 pF @ 25 V | - | - | PG-TO220-3-1 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP06N60C3XKSA1LOW POWER_LEGACY Infineon Technologies |
4,318 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | Through Hole | 3.9V @ 260µA | 31 nC @ 10 V | 600 V | ±20V | 620 pF @ 25 V | - | - | PG-TO220-3-1 | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP07N60S5HKSA1LOW POWER_LEGACY Infineon Technologies |
8,882 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Through Hole | 5.5V @ 350µA | 35 nC @ 10 V | 600 V | ±20V | 970 pF @ 25 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP07N60S5XKSA1LOW POWER_LEGACY Infineon Technologies |
5,457 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Through Hole | 5.5V @ 350µA | 35 nC @ 10 V | 600 V | ±20V | 970 pF @ 25 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP07N65C3XKSA1LOW POWER_LEGACY Infineon Technologies |
6,641 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Through Hole | 3.9V @ 350µA | 27 nC @ 10 V | 650 V | ±20V | 790 pF @ 25 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SIPC03S2N03LX3MA1LV POWER MOS Infineon Technologies |
2,268 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
