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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSS138N-E6327MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
7,986 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | Surface Mount | 1.4V @ 250µA | 1.4 nC @ 10 V | 60 V | ±20V | 41 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
BSS7728NH6327XTSA1MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
2,533 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 2.3V @ 26µA | 1.5 nC @ 10 V | 60 V | ±20V | 56 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
IRFH7184ATRPBFMOSFET N-CH 8-TDSON Infineon Technologies |
2,355 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRFH7190ATRPBFMOSFET N-CH 8-TDSON Infineon Technologies |
8,495 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
94-2311PBFMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
5,318 | - |
|
数据表 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF7324D1TRPBFMOSFET P-CH 20V 2.2A 8SO Infineon Technologies |
5,998 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 7.8 nC @ 4.5 V | 20 V | ±12V | 260 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SO | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
IPD50R2K0CEBTMA1CONSUMER Infineon Technologies |
6,848 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 13V | 2Ohm @ 600mA, 13V | Surface Mount | 3.5V @ 50µA | 6 nC @ 10 V | 500 V | ±20V | 124 pF @ 100 V | - | - | PG-TO252-3 | - | 33W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI70R950CEXKSA1CONSUMER Infineon Technologies |
7,554 | - |
|
数据表 |
CoolMOS™ CE | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | Through Hole | 3.5V @ 150µA | 15.3 nC @ 10 V | 700 V | ±20V | 328 pF @ 100 V | - | - | PG-TO262-3-1 | - | 68W (Tc) | -40°C ~ 150°C (TJ) |
|
IPS60R2K1CEAKMA1CONSUMER Infineon Technologies |
7,230 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.7A (Tj) | 10V | 2.1Ohm @ 760mA, 10V | Through Hole | 3.5V @ 60µA | 6.7 nC @ 10 V | 600 V | ±20V | 140 pF @ 100 V | - | - | PG-TO251-3 | - | 38W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IPS60R650CEAKMA1CONSUMER Infineon Technologies |
3,486 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.9A (Tj) | 10V | 650mOhm @ 2.4A, 10V | Through Hole | 3.5V @ 200µA | 20.5 nC @ 10 V | 600 V | ±20V | 440 pF @ 100 V | - | - | PG-TO251-3 | - | 82W (Tc) | -40°C ~ 150°C (TJ) |
