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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRFP2907MOSFET N-CH 75V 90A TO247AC Infineon Technologies |
9,810 | - |
|
数据表 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 4.5mOhm @ 125A, 10V | Through Hole | 4V @ 250µA | 620 nC @ 10 V | 75 V | ±20V | 13000 pF @ 25 V | - | - | TO-247AC | - | 470W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFP4004MOSFET N-CH 40V 195A TO247AC Infineon Technologies |
4,510 | - |
|
数据表 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.7mOhm @ 195A, 10V | Through Hole | 4V @ 250µA | 330 nC @ 10 V | 40 V | ±20V | 8920 pF @ 25 V | - | - | TO-247AC | - | 380W (Tc) | -55°C ~ 175°C (TJ) |
|
BSS84PL6433HTMA1MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies |
5,667 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | Surface Mount | 2V @ 20µA | 1.5 nC @ 10 V | 60 V | ±20V | 19 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
AUIRFR024NMOSFET N-CH 55V 17A TO252AA Infineon Technologies |
7,122 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 55 V | ±20V | 370 pF @ 25 V | - | - | TO-252AA | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFR1018EMOSFET N-CH 60V 56A DPAK Infineon Technologies |
4,078 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | Surface Mount | 4V @ 100µA | 69 nC @ 10 V | 60 V | ±20V | 2290 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFR2405MOSFET N-CH 55V 30A DPAK Infineon Technologies |
5,028 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 16mOhm @ 34A, 10V | Surface Mount | 4V @ 250µA | 110 nC @ 10 V | 55 V | ±20V | 2430 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFR3504MOSFET N-CH 40V 56A DPAK Infineon Technologies |
2,905 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 9.2mOhm @ 30A, 10V | Surface Mount | 4V @ 250µA | 71 nC @ 10 V | 40 V | ±20V | 2150 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFR3607MOSFET N-CH 75V 56A DPAK Infineon Technologies |
5,440 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | Surface Mount | 4V @ 100µA | 84 nC @ 10 V | 75 V | ±20V | 3070 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFR3806MOSFET N-CH 60V 43A DPAK Infineon Technologies |
8,488 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | Surface Mount | 4V @ 50µA | 30 nC @ 10 V | 60 V | ±20V | 1150 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFR4615MOSFET N-CH 150V 33A DPAK Infineon Technologies |
8,119 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | Surface Mount | 5V @ 100µA | 26 nC @ 10 V | 150 V | ±20V | 1750 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 144W (Tc) | -55°C ~ 175°C (TJ) |
