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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF2805SMOSFET N-CH 55V 135A D2PAK Infineon Technologies |
7,107 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | Surface Mount | 4V @ 250µA | 230 nC @ 10 V | 55 V | ±20V | 5110 pF @ 25 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF2807MOSFET N-CH 75V 75A TO220AB Infineon Technologies |
7,504 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 13mOhm @ 43A, 10V | Through Hole | 4V @ 250µA | 160 nC @ 10 V | 75 V | ±20V | 3820 pF @ 25 V | - | - | TO-220AB | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF2903ZMOSFET N-CH 30V 160A TO220AB Infineon Technologies |
6,201 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 30 V | ±20V | 6320 pF @ 25 V | - | - | TO-220AB | - | 290W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF2903ZLMOSFET N-CH 30V 160A TO262 Infineon Technologies |
6,496 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | Through Hole | 4V @ 150µA | 240 nC @ 10 V | 30 V | ±20V | 6320 pF @ 25 V | - | - | TO-262 | - | 231W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF2903ZSMOSFET N-CH 30V 160A D2PAK Infineon Technologies |
3,874 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | Surface Mount | 4V @ 150µA | 240 nC @ 10 V | 30 V | ±20V | 6320 pF @ 25 V | - | - | D2PAK | - | 231W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF3004WLMOSFET N-CH 40V 240A TO262-3 Infineon Technologies |
5,882 | - |
|
数据表 |
HEXFET® | TO-262-3 Wide Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240A (Tc) | 10V | 1.4mOhm @ 195A, 10V | Surface Mount | 4V @ 250µA | 210 nC @ 10 V | 40 V | ±20V | 9450 pF @ 32 V | - | - | TO-262-3 Wide | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF3007MOSFET N-CH 75V 75A TO220AB Infineon Technologies |
7,790 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | Through Hole | 4V @ 250µA | 130 nC @ 10 V | 75 V | ±20V | 3270 pF @ 25 V | - | - | TO-220AB | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF3315SMOSFET N-CH 150V 21A D2PAK Infineon Technologies |
3,303 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | Surface Mount | 4V @ 250µA | 95 nC @ 10 V | 150 V | ±20V | 1300 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF3415MOSFET N-CH 150V 43A TO220AB Infineon Technologies |
7,149 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 200 nC @ 10 V | 150 V | ±20V | 2400 pF @ 25 V | - | - | TO-220AB | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF3504MOSFET N-CH 40V 87A TO220AB Infineon Technologies |
7,833 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 87A (Tc) | 10V | 9.2mOhm @ 52A, 10V | Through Hole | 4V @ 100µA | 54 nC @ 10 V | 40 V | ±20V | 2150 pF @ 25 V | - | - | TO-220AB | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
