Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 577

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRLS3036-7TRL MOSFET N-CH 60V 240A D2PAK Infineon Technologies	7,754	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	4.5V, 10V	1.9mOhm @ 180A, 10V	Surface Mount	2.5V @ 250µA	160 nC @ 4.5 V	60 V	±16V	11270 pF @ 50 V	-	-	D2PAK (7-Lead)	-	380W (Tc)	-55°C ~ 175°C (TJ)
AUIRLS3036TRL MOSFET N-CH 60V 195A D2PAK Infineon Technologies	8,416	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	2.4mOhm @ 165A, 10V	Surface Mount	2.5V @ 250µA	140 nC @ 4.5 V	60 V	±16V	11210 pF @ 50 V	-	-	PG-TO263-3	-	380W (Tc)	-55°C ~ 175°C (TJ)
AUIRLS4030-7TRL MOSFET N-CH 100V 190A D2PAK Infineon Technologies	8,819	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	190A (Tc)	4.5V, 10V	3.9mOhm @ 110A, 10V	Surface Mount	2.5V @ 250µA	140 nC @ 4.5 V	100 V	±16V	11490 pF @ 50 V	AEC-Q101	-	D2PAK (7-Lead)	Automotive	370W (Tc)	-55°C ~ 175°C (TJ)
AUIRLS4030TRL MOSFET N-CH 100V 180A D2PAK Infineon Technologies	8,847	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	4.3mOhm @ 110A, 10V	Surface Mount	2.5V @ 250µA	130 nC @ 4.5 V	100 V	±16V	11360 pF @ 50 V	-	-	PG-TO263-3	-	370W (Tc)	-55°C ~ 175°C (TJ)
IRF1902GTRPBF MOSFET N-CH 20V 4.2A 8SO Infineon Technologies	7,778	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.2A (Ta)	-	85mOhm @ 4A, 4.5V	Surface Mount	700mV @ 250µA	7.5 nC @ 4.5 V	20 V	-	310 pF @ 15 V	-	-	8-SO	-	-	-55°C ~ 150°C (TJ)
IRF6892STRPBF MOSFET N CH 25V 28A S3 Infineon Technologies	2,351	-	询价单	数据表	HEXFET®	DirectFET™ Isometric S3C	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 125A (Tc)	4.5V, 10V	1.7mOhm @ 28A, 10V	Surface Mount	2.1V @ 50µA	25 nC @ 4.5 V	25 V	±16V	2510 pF @ 13 V	-	-	DIRECTFET™ S3C	-	2.1W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRF8304MTRPBF MOSFET N-CH 30V 28A DIRECTFET Infineon Technologies	2,421	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 170A (Tc)	4.5V, 10V	2.2mOhm @ 28A, 10V	Surface Mount	2.35V @ 100µA	42 nC @ 4.5 V	30 V	±20V	4700 pF @ 15 V	-	-	DirectFET™ Isometric MX	-	2.8W (Ta), 100W (Tc)	-40°C ~ 150°C (TJ)
IRF8308MTRPBF MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies	3,053	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	27A (Ta), 150A (Tc)	4.5V, 10V	2.5mOhm @ 27A, 10V	Surface Mount	2.35V @ 100µA	42 nC @ 4.5 V	30 V	±20V	4404 pF @ 15 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
IRF8327STRPBF MOSFET N-CH 30V 14A DIRECTFET Infineon Technologies	6,002	-	询价单	数据表	-	DirectFET™ Isometric SQ	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Ta), 60A (Tc)	4.5V, 10V	7.3mOhm @ 14A, 10V	Surface Mount	2.4V @ 25µA	14 nC @ 4.5 V	30 V	±20V	1430 pF @ 15 V	-	-	DIRECTFET™ SQ	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRLR8743TRLPBF MOSFET N-CH 30V 160A DPAK Infineon Technologies	2,851	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	4.5V, 10V	3.1mOhm @ 25A, 10V	Surface Mount	2.35V @ 100µA	59 nC @ 4.5 V	30 V	±20V	4880 pF @ 15 V	-	-	TO-252AA (DPAK)	-	135W (Tc)	-55°C ~ 175°C (TJ)

共 6460 条记录«上一页 1... 573 574 575 576577578 579 580...646 下一页»