Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 578

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF6892STR1PBF MOSFET N-CH 25V 28A DIRECTFET Infineon Technologies	2,248	-	询价单	数据表	HEXFET®	DirectFET™ Isometric S3C	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 125A (Tc)	4.5V, 10V	1.7mOhm @ 28A, 10V	Surface Mount	2.1V @ 50µA	25 nC @ 4.5 V	25 V	±16V	2510 pF @ 13 V	-	-	DIRECTFET™ S3C	-	2.1W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRF8302MTR1PBF MOSFET N CH 30V 31A MX Infineon Technologies	8,690	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	31A (Ta), 190A (Tc)	4.5V, 10V	1.8mOhm @ 31A, 10V	Surface Mount	2.35V @ 150µA	53 nC @ 4.5 V	30 V	±20V	6030 pF @ 15 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 104W (Tc)	-40°C ~ 150°C (TJ)
IRF8304MTR1PBF MOSFET N-CH 30V 28A DIRECTFET Infineon Technologies	2,705	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 170A (Tc)	4.5V, 10V	2.2mOhm @ 28A, 10V	Surface Mount	2.35V @ 100µA	42 nC @ 4.5 V	30 V	±20V	4700 pF @ 15 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 100W (Tc)	-40°C ~ 150°C (TJ)
IRF8327STR1PBF MOSFET N-CH 30V 14A DIRECTFET Infineon Technologies	9,456	-	询价单	数据表	-	DirectFET™ Isometric SQ	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Ta), 60A (Tc)	4.5V, 10V	7.3mOhm @ 14A, 10V	Surface Mount	2.4V @ 25µA	14 nC @ 4.5 V	30 V	±20V	1430 pF @ 15 V	-	-	DIRECTFET™ SQ	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
AUIRF1018ES MOSFET N-CH 60V 79A D2PAK Infineon Technologies	5,164	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	79A (Tc)	10V	8.4mOhm @ 47A, 10V	Surface Mount	4V @ 100µA	69 nC @ 10 V	60 V	±20V	2290 pF @ 50 V	-	-	D2PAK	-	110W (Tc)	-55°C ~ 175°C (TJ)
AUIRF1404 MOSFET N-CH 40V 160A TO220AB Infineon Technologies	3,454	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	4mOhm @ 121A, 10V	Through Hole	4V @ 250µA	196 nC @ 10 V	40 V	±20V	5669 pF @ 25 V	-	-	TO-220AB	-	333W (Tc)	-55°C ~ 175°C (TJ)
AUIRF1404S MOSFET N-CH 40V 75A D2PAK Infineon Technologies	7,780	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	4mOhm @ 95A, 10V	Surface Mount	4V @ 250µA	200 nC @ 10 V	40 V	±20V	7360 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)
AUIRF1405 MOSFET N-CH 55V 75A TO220AB Infineon Technologies	2,536	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	5.3mOhm @ 101A, 10V	Through Hole	4V @ 250µA	260 nC @ 10 V	55 V	±20V	5480 pF @ 25 V	-	-	TO-220AB	-	330W (Tc)	-55°C ~ 175°C (TJ)
AUIRF2805 MOSFET N-CH 55V 75A TO220AB Infineon Technologies	3,343	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	4.7mOhm @ 104A, 10V	Through Hole	4V @ 250µA	230 nC @ 10 V	55 V	±20V	5110 pF @ 25 V	-	-	TO-220AB	-	330W (Tc)	-55°C ~ 175°C (TJ)
SN7002W E6433 MOSFET N-CH 60V 230MA SOT323-3 Infineon Technologies	4,818	-	询价单	数据表	SIPMOS®	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	230mA (Ta)	4.5V, 10V	5Ohm @ 230mA, 10V	Surface Mount	1.8V @ 26µA	1.5 nC @ 10 V	60 V	±20V	45 pF @ 25 V	-	-	PG-SOT323	-	500mW (Ta)	-55°C ~ 150°C (TJ)

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