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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRF7207QTR

AUIRF7207QTR

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies

8,164 -
AUIRF7207QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A (Ta) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V Surface Mount 1.6V @ 250µA 22 nC @ 4.5 V 20 V ±12V 780 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF7416QTR

AUIRF7416QTR

MOSFET P-CH 30V 10A 8SO

Infineon Technologies

4,085 -
AUIRF7416QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V Surface Mount 2.04V @ 250µA 92 nC @ 10 V 30 V ±20V 1700 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRF7478QTR

AUIRF7478QTR

MOSFET N-CH 60V 7A 8SO

Infineon Technologies

9,934 -
AUIRF7478QTR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V Surface Mount 3V @ 250µA 31 nC @ 4.5 V 60 V ±20V 1740 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AUIRFL014NTR

AUIRFL014NTR

MOSFET N-CH 55V 1.5A SOT-223

Infineon Technologies

3,415 -
AUIRFL014NTR

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 55 V ±20V 190 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRFL024NTR

AUIRFL024NTR

MOSFET N-CH 55V 2.8A SOT-223

Infineon Technologies

9,274 -
AUIRFL024NTR

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V Surface Mount 4V @ 250µA 18.3 nC @ 10 V 55 V ±20V 400 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
AUIRFR024NTRL

AUIRFR024NTRL

MOSFET N-CH 55V 17A TO252AA

Infineon Technologies

2,124 -
AUIRFR024NTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) - 75mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 55 V - 370 pF @ 25 V - - TO-252AA - 45W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2407TRL

AUIRFR2407TRL

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

4,801 -
AUIRFR2407TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) - 26mOhm @ 25A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 75 V - 2400 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3207ZTRL

AUIRFS3207ZTRL

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies

7,633 -
AUIRFS3207ZTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) - 4.1mOhm @ 75A, 10V Surface Mount 4V @ 150µA 170 nC @ 10 V 75 V - 6920 pF @ 50 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3306TRL

AUIRFS3306TRL

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies

5,764 -
AUIRFS3306TRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.2mOhm @ 75A, 10V Surface Mount 4V @ 150µA 125 nC @ 10 V 60 V ±20V 4520 pF @ 50 V - - PG-TO263-3 - 230W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3607TRL

AUIRFS3607TRL

MOSFET N-CH 75V 80A D2PAK

Infineon Technologies

3,921 -
AUIRFS3607TRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 9mOhm @ 46A, 10V Surface Mount 4V @ 100µA 84 nC @ 10 V 75 V ±20V 3070 pF @ 50 V - - PG-TO263-3 - 140W (Tc) -55°C ~ 175°C (TJ)
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