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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFR812TRPBF

IRFR812TRPBF

MOSFET N-CH 500V 3.6A DPAK

Infineon Technologies

2,525 -
IRFR812TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 500 V ±20V 810 pF @ 25 V - - TO-252AA (DPAK) - 78W (Tc) -55°C ~ 150°C (TJ)
IRFR812PBF

IRFR812PBF

MOSFET N-CH 500V 3.6A DPAK

Infineon Technologies

5,521 -
IRFR812PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 500 V ±20V 810 pF @ 25 V - - TO-252AA (DPAK) - 78W (Tc) -55°C ~ 150°C (TJ)
IRFR825PBF

IRFR825PBF

MOSFET N-CH 500V 6A DPAK

Infineon Technologies

2,032 -
IRFR825PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.3Ohm @ 3.7A, 10V Surface Mount 5V @ 250µA 34 nC @ 10 V 500 V ±20V 1346 pF @ 25 V - - TO-252AA (DPAK) - 119W (Tc) -55°C ~ 150°C (TJ)
IRFH7107TRPBF

IRFH7107TRPBF

MOSFET N-CH 75V 14A/75A 8PQFN

Infineon Technologies

7,599 -
IRFH7107TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 75A (Tc) 10V 8.5mOhm @ 45A, 10V Surface Mount 4V @ 100µA 72 nC @ 10 V 75 V ±20V 3110 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
IRFSL4510PBF

IRFSL4510PBF

MOSFET N-CH 100V 61A TO262

Infineon Technologies

9,236 -
IRFSL4510PBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 61A (Tc) 10V 13.9mOhm @ 37A, 10V Through Hole 4V @ 100µA 87 nC @ 10 V 100 V ±20V 3180 pF @ 50 V - - TO-262 - 140W (Tc) -55°C ~ 175°C (TJ)
IRFR4510PBF

IRFR4510PBF

MOSFET N CH 100V 56A DPAK

Infineon Technologies

2,280 -
IRFR4510PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 13.9mOhm @ 38A, 10V Surface Mount 4V @ 100µA 81 nC @ 10 V 100 V ±20V 3031 pF @ 50 V - - TO-252AA (DPAK) - 143W (Tc) -55°C ~ 175°C (TJ)
IRFS4510PBF

IRFS4510PBF

MOSFET N-CH 100V 61A D2PAK

Infineon Technologies

5,692 -
IRFS4510PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 61A (Tc) 10V 13.9mOhm @ 37A, 10V Surface Mount 4V @ 100µA 87 nC @ 10 V 100 V ±20V 3180 pF @ 50 V - - PG-TO263-3 - 140W (Tc) -55°C ~ 175°C (TJ)
IRFI4510GPBF

IRFI4510GPBF

MOSFET N CH 100V 35A TO220

Infineon Technologies

3,619 -
IRFI4510GPBF

数据表

HEXFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 13.5mOhm @ 21A, 10V Through Hole 4V @ 100µA 81 nC @ 10 V 100 V ±20V 2998 pF @ 50 V - - TO-220AB Full-Pak - 42W (Tc) -55°C ~ 175°C (TJ)
AUIRF1404STRL

AUIRF1404STRL

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies

7,020 -
AUIRF1404STRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4mOhm @ 95A, 10V Surface Mount 4V @ 250µA 200 nC @ 10 V 40 V ±20V 7360 pF @ 25 V - - D2PAK - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
AUIRF3315STRL

AUIRF3315STRL

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies

6,245 -
AUIRF3315STRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 82mOhm @ 12A, 10V Surface Mount 4V @ 250µA 95 nC @ 10 V 150 V ±20V 1300 pF @ 25 V - - D2PAK - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ)
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