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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFH7110TRPBF

IRFH7110TRPBF

MOSFET N-CH 100V 11A/58A 8PQFN

Infineon Technologies

5,516 -
IRFH7110TRPBF

数据表

HEXFET® 8-TQFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 58A (Tc) 10V 13.5mOhm @ 35A, 10V Surface Mount 4V @ 100µA 87 nC @ 10 V 100 V ±20V 3240 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SPU30P06P

SPU30P06P

MOSFET P-CH 60V 30A TO251-3

Infineon Technologies

8,831 -
SPU30P06P

数据表

SIPMOS® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 75mOhm @ 21.5A, 10V Through Hole 4V @ 1.7mA 48 nC @ 10 V 60 V ±20V 1535 pF @ 25 V - - PG-TO251-3 - 125W (Tc) -55°C ~ 175°C (TJ)
IRF6216PBF

IRF6216PBF

MOSFET P-CH 150V 2.2A 8SO

Infineon Technologies

6,645 -
IRF6216PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 2.2A (Ta) 10V 240mOhm @ 1.3A, 10V Surface Mount 5V @ 250µA 49 nC @ 10 V 150 V ±20V 1280 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFS4310PBF

IRFS4310PBF

MOSFET N-CH 100V 130A D2PAK

Infineon Technologies

4,482 -
IRFS4310PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 7mOhm @ 75A, 10V Surface Mount 4V @ 250µA 250 nC @ 10 V 100 V ±20V 7670 pF @ 50 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
IRFR3418PBF

IRFR3418PBF

MOSFET N-CH 80V 70A DPAK

Infineon Technologies

8,474 -
IRFR3418PBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 14mOhm @ 18A, 10V Surface Mount 5.5V @ 250µA 94 nC @ 10 V 80 V ±20V 3510 pF @ 25 V - - TO-252AA (DPAK) - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ)
IRF7425PBF

IRF7425PBF

MOSFET P-CH 20V 15A 8SO

Infineon Technologies

2,927 -
IRF7425PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V Surface Mount 1.2V @ 250µA 130 nC @ 4.5 V 20 V ±12V 7980 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRLR3110ZPBF

IRLR3110ZPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies

3,211 -
IRLR3110ZPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V Surface Mount 2.5V @ 100µA 48 nC @ 4.5 V 100 V ±16V 3980 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
IRFS3307PBF

IRFS3307PBF

MOSFET N-CH 75V 120A D2PAK

Infineon Technologies

5,278 -
IRFS3307PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 6.3mOhm @ 75A, 10V Surface Mount 4V @ 150µA 180 nC @ 10 V 75 V ±20V 5150 pF @ 50 V - - D2PAK - 200W (Tc) -55°C ~ 175°C (TJ)
IRF3805S-7PPBF

IRF3805S-7PPBF

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies

6,755 -
IRF3805S-7PPBF

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 2.6mOhm @ 140A, 10V Surface Mount 4V @ 250µA 200 nC @ 10 V 55 V ±20V 7820 pF @ 25 V - - D2PAK (7-Lead) - 300W (Tc) -55°C ~ 175°C (TJ)
IRF7210PBF

IRF7210PBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies

7,942 -
IRF7210PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 2.5V, 4.5V 7mOhm @ 16A, 4.5V Surface Mount 600mV @ 500µA (Min) 212 nC @ 5 V 12 V ±12V 17179 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
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