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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
94-3660PBFMOSFET N-CH 100V 4.5A 8SO Infineon Technologies |
2,269 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.5A (Ta) | - | 60mOhm @ 2.7A, 10V | Surface Mount | 5.5V @ 250µA | 50 nC @ 10 V | 100 V | - | 930 pF @ 25 V | - | - | 8-SO | - | - | - |
|
SPB10N10LGN-CHANNEL POWER MOSFET Infineon Technologies |
993 | - |
|
数据表 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | Surface Mount | 2V @ 21µA | 22 nC @ 10 V | 100 V | ±20V | 444 pF @ 25 V | - | - | PG-TO263-3-2 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
SPS02N60C3MOSFET N-CH 650V 1.8A TO251-3 Infineon Technologies |
3,132 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | Through Hole | 3.9V @ 80µA | 12.5 nC @ 10 V | 650 V | ±20V | 200 pF @ 25 V | - | - | PG-TO251-3-11 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IRL3716SPBFMOSFET N-CH 20V 180A D2PAK Infineon Technologies |
5,142 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | Surface Mount | 3V @ 250µA | 79 nC @ 4.5 V | 20 V | ±20V | 5090 pF @ 10 V | - | - | D2PAK | - | 210W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLL024ZPBFMOSFET N-CH 55V 5A SOT223 Infineon Technologies |
8,902 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | Surface Mount | 3V @ 250µA | 11 nC @ 5 V | 55 V | ±16V | 380 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF8721PBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
3,085 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | Surface Mount | 2.35V @ 25µA | 12 nC @ 4.5 V | 30 V | ±20V | 1040 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7240PBFMOSFET P-CH 40V 10.5A 8SO Infineon Technologies |
2,721 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 10.5A (Ta) | 4.5V, 10V | 15mOhm @ 10.5A, 10V | Surface Mount | 3V @ 250µA | 110 nC @ 10 V | 40 V | ±20V | 9250 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFR540ZPBFMOSFET N-CH 100V 35A DPAK Infineon Technologies |
2,351 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | Surface Mount | 4V @ 50µA | 59 nC @ 10 V | 100 V | ±20V | 1690 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF2907ZSPBFMOSFET N-CH 75V 160A D2PAK Infineon Technologies |
9,591 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 270 nC @ 10 V | 75 V | ±20V | 7500 pF @ 25 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF7854PBFMOSFET N-CH 80V 10A 8SO Infineon Technologies |
6,903 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 10V | 13.4mOhm @ 10A, 10V | Surface Mount | 4.9V @ 100µA | 41 nC @ 10 V | 80 V | ±20V | 1620 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
