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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPA093N06N3GXKSA1

IPA093N06N3GXKSA1

MOSFET N-CH 60V 43A TO220-3-31

Infineon Technologies

7,180 -
IPA093N06N3GXKSA1

数据表

OptiMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 9.3mOhm @ 40A, 10V Through Hole 4V @ 34µA 48 nC @ 10 V 60 V ±20V 3900 pF @ 30 V - - PG-TO220-3-31 - 33W (Tc) -55°C ~ 175°C (TJ)
IRF6655TR1PBF

IRF6655TR1PBF

MOSFET N-CH 100V 4.2A DIRECTFET

Infineon Technologies

6,726 -
IRF6655TR1PBF

数据表

HEXFET® DirectFET™ Isometric SH Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V Surface Mount 4.8V @ 25µA 11.7 nC @ 10 V 100 V ±20V 530 pF @ 25 V - - DIRECTFET™ SH - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRFS23N20DTRRP

IRFS23N20DTRRP

MOSFET N-CH 200V 24A D2PAK

Infineon Technologies

8,496 -
IRFS23N20DTRRP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 100mOhm @ 14A, 10V Surface Mount 5.5V @ 250µA 86 nC @ 10 V 200 V ±30V 1960 pF @ 25 V - - D2PAK - 3.8W (Ta), 170W (Tc) -
IRF3710ZSTRRPBF

IRF3710ZSTRRPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies

4,303 -
IRF3710ZSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 18mOhm @ 35A, 10V Surface Mount 4V @ 250µA 120 nC @ 10 V 100 V ±20V 2900 pF @ 25 V - - D2PAK - 160W (Tc) -55°C ~ 175°C (TJ)
IRFS4610TRRPBF

IRFS4610TRRPBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies

2,026 -
IRFS4610TRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 73A (Tc) 10V 14mOhm @ 44A, 10V Surface Mount 4V @ 100µA 140 nC @ 10 V 100 V ±20V 3550 pF @ 50 V - - D2PAK - 190W (Tc) -55°C ~ 175°C (TJ)
IRF6716MTR1PBF

IRF6716MTR1PBF

MOSFET N-CH 25V 39A DIRECTFET

Infineon Technologies

3,223 -
IRF6716MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 39A (Ta), 180A (Tc) 4.5V, 10V 1.6mOhm @ 40A, 10V Surface Mount 2.4V @ 100µA 59 nC @ 4.5 V 25 V ±20V 5150 pF @ 13 V - - DIRECTFET™ MX - 3.6W (Ta), 78W (Tc) -40°C ~ 150°C (TJ)
IRF6616TR1PBF

IRF6616TR1PBF

MOSFET N-CH 40V 19A DIRECTFET

Infineon Technologies

8,038 -
IRF6616TR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V Surface Mount 2.25V @ 250µA 44 nC @ 4.5 V 40 V ±20V 3765 pF @ 20 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRL7833STRRPBF

IRL7833STRRPBF

MOSFET N-CH 30V 150A D2PAK

Infineon Technologies

4,521 -
IRL7833STRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V Surface Mount 2.3V @ 250µA 47 nC @ 4.5 V 30 V ±20V 4170 pF @ 15 V - - D2PAK - 140W (Tc) -55°C ~ 175°C (TJ)
IRL2910STRRPBF

IRL2910STRRPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies

4,493 -
IRL2910STRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) - 26mOhm @ 29A, 10V Surface Mount 2V @ 250µA 140 nC @ 5 V 100 V - 3700 pF @ 25 V - - D2PAK - - -
IRFS31N20DTRRP

IRFS31N20DTRRP

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies

6,900 -
IRFS31N20DTRRP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 82mOhm @ 18A, 10V Surface Mount 5.5V @ 250µA 107 nC @ 10 V 200 V ±30V 2370 pF @ 25 V - - D2PAK - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
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