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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF540ZSTRRPBF

IRF540ZSTRRPBF

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies

9,307 -
IRF540ZSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 26.5mOhm @ 22A, 10V Surface Mount 4V @ 250µA 63 nC @ 10 V 100 V ±20V 1770 pF @ 25 V - - D2PAK - 92W (Tc) -55°C ~ 175°C (TJ)
IRF6614TR1PBF

IRF6614TR1PBF

MOSFET N-CH 40V 12.7A DIRECTFET

Infineon Technologies

7,146 -
IRF6614TR1PBF

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.7A (Ta), 55A (Tc) 4.5V, 10V 8.3mOhm @ 12.7A, 10V Surface Mount 2.25V @ 250µA 29 nC @ 4.5 V 40 V ±20V 2560 pF @ 20 V - - DIRECTFET™ ST - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF1010ZSTRRPBF

IRF1010ZSTRRPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

5,808 -
IRF1010ZSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 7.5mOhm @ 75A, 10V Surface Mount 4V @ 250µA 95 nC @ 10 V 55 V ±20V 2840 pF @ 25 V - - D2PAK - 140W (Tc) -55°C ~ 175°C (TJ)
IRF2807ZSTRRPBF

IRF2807ZSTRRPBF

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies

5,604 -
IRF2807ZSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 9.4mOhm @ 53A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 75 V ±20V 3270 pF @ 25 V - - D2PAK - 170W (Tc) -55°C ~ 175°C (TJ)
IRFS17N20DTRRP

IRFS17N20DTRRP

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies

8,595 -
IRFS17N20DTRRP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 170mOhm @ 9.8A, 10V Surface Mount 5.5V @ 250µA 50 nC @ 10 V 200 V ±30V 1100 pF @ 25 V - - D2PAK - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ)
IPP139N08N3GXKSA1

IPP139N08N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies

632 -
IPP139N08N3GXKSA1

数据表

OptiMOS™ 3 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V Through Hole 3.5V @ 33µA 25 nC @ 10 V 80 V ±20V 1730 pF @ 40 V - - PG-TO220-3 - 79W (Tc) -55°C ~ 175°C (TJ)
IRF2807STRRPBF

IRF2807STRRPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies

8,166 -
IRF2807STRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) 10V 13mOhm @ 43A, 10V Surface Mount 4V @ 250µA 160 nC @ 10 V 75 V ±20V 3820 pF @ 25 V - - D2PAK - 230W (Tc) -55°C ~ 175°C (TJ)
IPP80N04S306AKSA1

IPP80N04S306AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

2,929 -
IPP80N04S306AKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 5.7mOhm @ 80A, 10V Through Hole 4V @ 52µA 47 nC @ 10 V 40 V ±20V 3250 pF @ 25 V - - PG-TO220-3-1 - 100W (Tc) -55°C ~ 175°C (TJ)
IRF3315STRRPBF

IRF3315STRRPBF

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies

5,045 -
IRF3315STRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 82mOhm @ 12A, 10V Surface Mount 4V @ 250µA 95 nC @ 10 V 150 V ±20V 1300 pF @ 25 V - - D2PAK - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ)
IPP47N10SL26AKSA1

IPP47N10SL26AKSA1

MOSFET N-CH 100V 47A TO220-3

Infineon Technologies

9,993 -
IPP47N10SL26AKSA1

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V Through Hole 2V @ 2mA 135 nC @ 10 V 100 V ±20V 2500 pF @ 25 V - - PG-TO220-3-1 - 175W (Tc) -55°C ~ 175°C (TJ)
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