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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF6678TR1PBF

IRF6678TR1PBF

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies

2,538 -
IRF6678TR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount 2.25V @ 250µA 65 nC @ 4.5 V 30 V ±20V 5640 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6678TRPBF

IRF6678TRPBF

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies

5,424 -
IRF6678TRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount 2.25V @ 250µA 65 nC @ 4.5 V 30 V ±20V 5640 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6691TR1PBF

IRF6691TR1PBF

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies

9,506 -
IRF6691TR1PBF

数据表

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 71 nC @ 4.5 V 20 V ±12V 6580 pF @ 10 V - - DIRECTFET™ MT - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6691TRPBF

IRF6691TRPBF

MOSFET N-CH 20V 32A DIRECTFET

Infineon Technologies

5,261 -
IRF6691TRPBF

数据表

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 71 nC @ 4.5 V 20 V ±12V 6580 pF @ 10 V - - DIRECTFET™ MT - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
BSC024N025S G

BSC024N025S G

MOSFET N-CH 25V 27A/100A TDSON

Infineon Technologies

2,762 -
BSC024N025S G

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 27A (Ta), 100A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V Surface Mount 2V @ 90µA 52 nC @ 5 V 25 V ±20V 6530 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
BSC029N025S G

BSC029N025S G

MOSFET N-CH 25V 24A/100A TDSON

Infineon Technologies

9,032 -
BSC029N025S G

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24A (Ta), 100A (Tc) 4.5V, 10V 2.9mOhm @ 50A, 10V Surface Mount 2V @ 80µA 41 nC @ 5 V 25 V ±20V 5090 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
IMZA65R039M1HXKSA1

IMZA65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

83 -
IMZA65R039M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 50A (Tc) 18V 50mOhm @ 25A, 18V Through Hole 5.7V @ 7.5mA 41 nC @ 18 V 650 V +20V, -2V 1393 pF @ 400 V - - PG-TO247-4-3 - 176W (Tc) -55°C ~ 175°C (TJ)
BSL211SPL6327HTSA1

BSL211SPL6327HTSA1

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies

2,876 -
BSL211SPL6327HTSA1

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V Surface Mount 1.2V @ 25µA 12.4 nC @ 4.5 V 20 V ±12V 654 pF @ 15 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
BSO104N03S

BSO104N03S

MOSFET N-CH 30V 10A 8DSO

Infineon Technologies

9,282 -
BSO104N03S

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 9.7mOhm @ 13A, 10V Surface Mount 2V @ 30µA 16 nC @ 5 V 30 V ±20V 2130 pF @ 15 V - - PG-DSO-8 - 1.56W (Ta) -55°C ~ 150°C (TJ)
BSO130P03SNTMA1

BSO130P03SNTMA1

MOSFET P-CH 30V 9.2A 8DSO

Infineon Technologies

3,784 -
BSO130P03SNTMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.2A (Ta) 10V 13mOhm @ 11.3A, 10V Surface Mount 2.2V @ 140µA 81 nC @ 10 V 30 V ±25V 3520 pF @ 25 V - - PG-DSO-8 - 1.56W (Ta) -55°C ~ 150°C (TJ)
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