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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPW60R170CFD7XKSA1

IPW60R170CFD7XKSA1

MOSFET N-CH 650V 14A TO247-3

Infineon Technologies

71 -
IPW60R170CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 170mOhm @ 6A, 10V Through Hole 4.5V @ 300µA 28 nC @ 10 V 650 V ±20V 1199 pF @ 400 V - - PG-TO247-3-21 - 75W (Tc) -55°C ~ 150°C (TJ)
IRF6617TRPBF

IRF6617TRPBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies

6,661 -
IRF6617TRPBF

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V Surface Mount 2.35V @ 250µA 17 nC @ 4.5 V 30 V ±20V 1300 pF @ 15 V - - DIRECTFET™ ST - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6618TR1PBF

IRF6618TR1PBF

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies

8,352 -
IRF6618TR1PBF

数据表

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount 2.35V @ 250µA 65 nC @ 4.5 V 30 V ±20V 5640 pF @ 15 V - - DIRECTFET™ MT - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6619TRPBF

IRF6619TRPBF

MOSFET N-CH 20V 30A DIRECTFET

Infineon Technologies

3,779 -
IRF6619TRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V Surface Mount 2.45V @ 250µA 57 nC @ 4.5 V 20 V ±20V 5040 pF @ 10 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6620TR1PBF

IRF6620TR1PBF

MOSFET N-CH 20V 27A DIRECTFET

Infineon Technologies

7,838 -
IRF6620TR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 27A (Ta), 150A (Tc) 4.5V, 10V 2.7mOhm @ 27A, 10V Surface Mount 2.45V @ 250µA 42 nC @ 4.5 V 20 V ±20V 4130 pF @ 10 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6621TR1PBF

IRF6621TR1PBF

MOSFET N-CH 30V 12A DIRECTFET

Infineon Technologies

9,855 -
IRF6621TR1PBF

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V Surface Mount 2.25V @ 250µA 17.5 nC @ 4.5 V 30 V ±20V 1460 pF @ 15 V - - DIRECTFET™ SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6621TRPBF

IRF6621TRPBF

MOSFET N-CH 30V 12A DIRECTFET

Infineon Technologies

7,761 -
IRF6621TRPBF

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V Surface Mount 2.25V @ 250µA 17.5 nC @ 4.5 V 30 V ±20V 1460 pF @ 15 V - - DIRECTFET™ SQ - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6626TR1PBF

IRF6626TR1PBF

MOSFET N-CH 30V 16A DIRECTFET

Infineon Technologies

7,242 -
IRF6626TR1PBF

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 72A (Tc) 4.5V, 10V 5.4mOhm @ 16A, 10V Surface Mount 2.35V @ 250µA 29 nC @ 4.5 V 30 V ±20V 2380 pF @ 15 V - - DIRECTFET™ ST - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6626TRPBF

IRF6626TRPBF

MOSFET N-CH 30V 16A DIRECTFET

Infineon Technologies

2,926 -
IRF6626TRPBF

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 72A (Tc) 4.5V, 10V 5.4mOhm @ 16A, 10V Surface Mount 2.35V @ 250µA 29 nC @ 4.5 V 30 V ±20V 2380 pF @ 15 V - - DIRECTFET™ ST - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6628TR1PBF

IRF6628TR1PBF

MOSFET N-CH 25V 27A DIRECTFET

Infineon Technologies

6,905 -
IRF6628TR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 27A (Ta), 160A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V Surface Mount 2.35V @ 100µA 47 nC @ 4.5 V 25 V ±20V 3770 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 96W (Tc) -40°C ~ 150°C (TJ)
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