Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 444

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IMBG120R012M2HXTMA1 SIC DISCRETE Infineon Technologies	31	-	询价单	数据表	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	144A (Tc)	15V, 18V	12.2mOhm @ 56.7A, 18V	Surface Mount	5.1V @ 17.8mA	124 nC @ 18 V	1200 V	+23V, -10V	4050 pF @ 800 V	-	-	PG-TO263-7-12	-	600W (Tc)	-55°C ~ 175°C (TJ)
AIMBG120R010M1XTMA1 SIC_DISCRETE Infineon Technologies	13	-	询价单	数据表	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	187A	-	-	Surface Mount	-	-	1200 V	-	-	-	-	PG-TO263-7-12	-	-	-55°C ~ 175°C
IMW120R007M1HXKSA1 SIC DISCRETE Infineon Technologies	88	-	询价单	数据表	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	225A (Tc)	15V, 18V	9.9mOhm @ 108A, 18V	Through Hole	5.2V @ 47mA	289 nC @ 18 V	1200 V	+20V, -5V	9170 pF @ 800 V	-	-	PG-TO247-3	-	750W (Tc)	-55°C ~ 175°C (TJ)
IPD031N03LGATMA1 MOSFET N-CH 30V 90A TO252-3 Infineon Technologies	822	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.1mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	51 nC @ 10 V	30 V	±20V	5300 pF @ 15 V	-	-	PG-TO252-3-11	-	94W (Tc)	-55°C ~ 175°C (TJ)
BSP135IXTSA1 MOSFET N-CH 600V 120MA SOT223-4 Infineon Technologies	1,023	-	询价单	数据表	-	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	120mA (Ta)	0V, 10V	45Ohm @ 120mA, 10V	Surface Mount	1V @ 94µA	3.7 nC @ 5 V	600 V	±20V	98 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
ISP12DP06NMXTSA1 MOSFET P-CH 60V 2.8A SOT223-4 Infineon Technologies	1,060	-	询价单	数据表	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.8A (Ta)	10V	125mOhm @ 2.8A, 10V	Surface Mount	4V @ 520µA	20.2 nC @ 10 V	60 V	±20V	790 pF @ 30 V	-	-	PG-SOT223-4	-	1.8W (Ta), 4.2W (Tc)	-55°C ~ 150°C (TJ)
BSP171PH6327XTSA1 MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies	61	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	4.5V, 10V	300mOhm @ 1.9A, 10V	Surface Mount	2V @ 460µA	20 nC @ 10 V	60 V	±20V	460 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IPP040N06NAKSA1 MOSFET N-CH 60V 20A/80A TO220-3 Infineon Technologies	92	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta), 80A (Tc)	6V, 10V	4mOhm @ 80A, 10V	Through Hole	2.8V @ 50µA	38 nC @ 10 V	60 V	±20V	2700 pF @ 30 V	-	-	PG-TO220-3	-	3W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)
IPA050N10NM5SXKSA1 MOSFET N-CH 100V 66A TO220 Infineon Technologies	30	-	询价单	数据表	OptiMOS™ 5	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	66A (Tc)	6V, 10V	5mOhm @ 33A, 10V	Through Hole	3.8V @ 84µA	68 nC @ 10 V	100 V	±20V	4700 pF @ 50 V	-	-	PG-TO220 Full Pack	-	38W (Tc)	-55°C ~ 175°C (TJ)
IPA60R190P6XKSA1 MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies	55	-	询价单	数据表	CoolMOS™ P6	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20.2A (Tc)	10V	190mOhm @ 7.6A, 10V	Through Hole	4.5V @ 630µ	37 nC @ 10 V	600 V	±20V	1750 pF @ 100 V	-	-	PG-TO220-FP	-	34W (Tc)	-55°C ~ 150°C (TJ)

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