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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPP040N06N3GXKSA1

IPP040N06N3GXKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies

55 -
IPP040N06N3GXKSA1

数据表

OptiMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 4mOhm @ 90A, 10V Through Hole 4V @ 90µA 98 nC @ 10 V 60 V ±20V 11000 pF @ 30 V - - PG-TO220-3 - 188W (Tc) -55°C ~ 175°C (TJ)
IPA60R280CFD7XKSA1

IPA60R280CFD7XKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies

30 -
IPA60R280CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 280mOhm @ 3.6A, 10V Through Hole 4.5V @ 180µA 18 nC @ 10 V 650 V ±20V 807 pF @ 400 V - - PG-TO220-FP - 24W (Tc) -55°C ~ 150°C (TJ)
IRF6609TR1PBF

IRF6609TR1PBF

MOSFET N-CH 20V 31A DIRECTFET

Infineon Technologies

5,544 -
IRF6609TR1PBF

数据表

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 31A, 10V Surface Mount 2.45V @ 250µA 69 nC @ 4.5 V 20 V ±20V 6290 pF @ 10 V - - DIRECTFET™ MT - 1.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IPA60R230P6XKSA1

IPA60R230P6XKSA1

MOSFET N-CH 600V 16.8A TO220-FP

Infineon Technologies

90 -
IPA60R230P6XKSA1

数据表

CoolMOS™ P6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V Through Hole 4.5V @ 530µA 31 nC @ 10 V 600 V ±20V 1450 pF @ 100 V - - PG-TO220-FP - 33W (Tc) -55°C ~ 150°C (TJ)
IRF6609TRPBF

IRF6609TRPBF

MOSFET N-CH 20V 31A DIRECTFET

Infineon Technologies

5,546 -
IRF6609TRPBF

数据表

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 31A, 10V Surface Mount 2.45V @ 250µA 69 nC @ 4.5 V 20 V ±20V 6290 pF @ 10 V - - DIRECTFET™ MT - 1.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6612TR1PBF

IRF6612TR1PBF

MOSFET N-CH 30V 24A DIRECTFET

Infineon Technologies

9,098 -
IRF6612TR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24A (Ta), 136A (Tc) 4.5V, 10V 3.3mOhm @ 24A, 10V Surface Mount 2.25V @ 250µA 45 nC @ 4.5 V 30 V ±20V 3970 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6612TRPBF

IRF6612TRPBF

MOSFET N-CH 30V 24A DIRECTFET

Infineon Technologies

2,854 -
IRF6612TRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24A (Ta), 136A (Tc) 4.5V, 10V 3.3mOhm @ 24A, 10V Surface Mount 2.25V @ 250µA 45 nC @ 4.5 V 30 V ±20V 3970 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6614TRPBF

IRF6614TRPBF

MOSFET N-CH 40V 12.7A DIRECTFET

Infineon Technologies

8,976 -
IRF6614TRPBF

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.7A (Ta), 55A (Tc) 4.5V, 10V 8.3mOhm @ 12.7A, 10V Surface Mount 2.25V @ 250µA 29 nC @ 4.5 V 40 V ±20V 2560 pF @ 20 V - - DIRECTFET™ ST - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IRF6617TR1PBF

IRF6617TR1PBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies

2,318 -
IRF6617TR1PBF

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V Surface Mount 2.35V @ 250µA 17 nC @ 4.5 V 30 V ±20V 1300 pF @ 15 V - - DIRECTFET™ ST - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IPA029N06NXKSA1

IPA029N06NXKSA1

MOSFET N-CH 60V 84A TO220-FP

Infineon Technologies

92 -
IPA029N06NXKSA1

数据表

OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 6V, 10V 2.9mOhm @ 84A, 10V Through Hole 3.3V @ 75µA 66 nC @ 10 V 60 V ±20V 5125 pF @ 30 V - - PG-TO220-FP - 38W (Tc) -55°C ~ 175°C (TJ)
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