Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 443

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPC313N10N3RX1SA2 TRENCH >=100V Infineon Technologies	7,784	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSP315PE6327T MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies	4,605	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.17A (Ta)	4.5V, 10V	800mOhm @ 1.17A, 10V	Surface Mount	2V @ 160µA	7.8 nC @ 10 V	60 V	±20V	160 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSP88L6327HTSA1 MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies	2,105	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	350mA (Ta)	2.8V, 4.5V	6Ohm @ 350mA, 10V	Surface Mount	1.4V @ 108µA	6.8 nC @ 10 V	240 V	±20V	95 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
AUIRF1404 AUIRF1404 - 20V-40V N-CHANNEL AU Infineon Technologies	9,000	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	4mOhm @ 121A, 10V	Through Hole	4V @ 250µA	196 nC @ 10 V	40 V	±20V	5669 pF @ 25 V	-	-	TO-220AB	-	333W (Tc)	-55°C ~ 175°C (TJ)
IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	830	-	询价单	数据表	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	Surface Mount	1V @ 250µA	5 nC @ 10 V	30 V	±20V	85 pF @ 25 V	-	-	Micro3™/SOT-23	-	540mW (Ta)	-55°C ~ 150°C (TJ)
BSC007N04LS6ATMA1 MOSFET N-CH 40V 100A TDSON-8-6 Infineon Technologies	34	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	381A (Tc)	4.5V, 10V	0.7mOhm @ 50A, 10V	Surface Mount	2.3V @ 250µA	94 nC @ 4.5 V	40 V	±20V	8400 pF @ 20 V	-	-	PG-TDSON-8-6	-	188W	-55°C ~ 175°C (TJ)
BSC030N10NS5SCATMA1 TRENCH >=100V Infineon Technologies	90	-	询价单	数据表	OptiMOS™ 5	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	171A (Tc)	6V, 10V	3mOhm @ 50A, 10V	Surface Mount	3.8V @ 115µA	88 nC @ 10 V	100 V	±20V	6500 pF @ 50 V	-	-	PG-WSON-8-2	-	188W (Tc)	-55°C ~ 175°C (TJ)
IAUT300N08S5N014ATMA1 MOSFET N-CH 80V 300A 8HSOF Infineon Technologies	71	-	询价单	数据表	OptiMOS™ 5	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300A (DC)	6V, 10V	1.4mOhm @ 100A, 10V	Surface Mount	3.8V @ 230µA	187 nC @ 10 V	80 V	±20V	13178 pF @ 40 V	-	-	PG-HSOF-8-1	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPP030N10N3GXKSA1 MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	45	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3mOhm @ 100A, 10V	Through Hole	3.5V @ 275µA	206 nC @ 10 V	100 V	±20V	14800 pF @ 50 V	-	-	PG-TO220-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IMZ120R030M1HXKSA1 SICFET N-CH 1.2KV 56A TO247-4 Infineon Technologies	88	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	56A (Tc)	15V, 18V	40mOhm @ 25A, 18V	Through Hole	5.7V @ 10mA	63 nC @ 18 V	1200 V	+23V, -7V	2120 pF @ 800 V	-	-	PG-TO247-4-1	-	227W (Tc)	-55°C ~ 175°C (TJ)

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