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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GS61008T-MRGS61008T-MR Infineon Technologies Canada Inc. |
96 | - |
|
数据表 |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | Surface Mount | 1.3V @ 7mA | 12 nC @ 6 V | 100 V | +7V, -10V | 590 pF @ 50 V | - | - | - | - | - | -55°C ~ 150°C (TJ) |
|
|
IMLT65R020M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
39 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AIMW120R045M1XKSA1SICFET N-CH 1200V 52A TO247-3 Infineon Technologies |
35 | - |
|
数据表 |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 52A (Tc) | - | 59mOhm @ 20A, 15V | Through Hole | 5.7V @ 10mA | 57 nC @ 15 V | 1200 V | +20V, -7V | 2130 pF @ 800 V | AEC-Q101 | - | PG-TO247-3 | Automotive | 228W (Tc) | -40°C ~ 175°C (TJ) |
|
|
IPDQ60R007CM8XTMA1IPDQ60R007CM8XTMA1 Infineon Technologies |
15 | - |
|
数据表 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 288A (Tc) | 10V | 7mOhm @ 100A, 10V | Surface Mount | 4.7V @ 3.24mA | 370 nC @ 10 V | 600 V | ±20V | 16385 pF @ 400 V | - | - | PG-HDSOP-22 | - | 1.249kW (Tc) | -55°C ~ 150°C (TJ) |
|
ISP14EP15LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies |
587 | - |
|
数据表 |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 770mA (Ta), 1.29A (Tc) | 4.5V, 10V | 1.38Ohm @ 800mA, 10V | Surface Mount | 2V @ 270µA | 11.6 nC @ 10 V | 150 V | ±20V | 530 pF @ 75 V | - | - | PG-SOT223-4 | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) |
|
ISP98DP10LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies |
371 | - |
|
数据表 |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 930mA (Ta), 1.55A (Tc) | 4.5V, 10V | 980mOhm @ 900mA, 10V | Surface Mount | 2V @ 165µA | 7.2 nC @ 10 V | 100 V | ±20V | 350 pF @ 50 V | - | - | PG-SOT223-4 | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) |
|
ISP75DP06LMXTSA1MOSFET P-CH 60V 1.1A SOT223-4 Infineon Technologies |
1,011 | - |
|
数据表 |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 1.1A (Ta) | 4.5V, 10V | 750mOhm @ 1.1A, 10V | Surface Mount | 2V @ 77µA | 4 nC @ 10 V | 60 V | ±20V | 120 pF @ 30 V | - | - | PG-SOT223-4 | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA50R500CEXKSA2MOSFET N-CH 500V 5.4A TO220 Infineon Technologies |
34 | - |
|
数据表 |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5.4A (Tc) | 13V | 500mOhm @ 2.3A, 13V | Through Hole | 3.5V @ 200µA | 18.7 nC @ 10 V | 500 V | ±20V | 433 pF @ 100 V | - | - | PG-TO220-3-FP | - | 28W (Tc) | -40°C ~ 150°C (TJ) |
|
IPD42DP15LMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
75 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 1.7A (Ta), 9A (Tc) | 4.5V, 10V | 420mOhm @ 8.2A, 10V | Surface Mount | 2V @ 1.04mA | 43 nC @ 10 V | 150 V | ±20V | 2100 pF @ 75 V | - | - | PG-TO252-3 | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP082N10NF2SAKMA1TRENCH >=100V Infineon Technologies |
68 | - |
|
数据表 |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 77A (Tc) | 6V, 10V | 8.2mOhm @ 50A, 10V | Through Hole | 3.8V @ 46µA | 42 nC @ 10 V | 100 V | ±20V | 2000 pF @ 50 V | - | - | PG-TO220-3 | - | 3.8W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
