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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7483MTRPBFIRF7483 - 12V-300V N-CHANNEL POW Infineon Technologies |
3,799 | - |
|
数据表 |
StrongIRFET™ | DirectFET™ Isometric MF | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 135A (Tc) | 6V, 10V | 2.3mOhm @ 81A, 10V | Surface Mount | 3.9V @ 100µA | 81 nC @ 10 V | 40 V | ±20V | 3913 pF @ 25 V | - | - | DirectFET™ Isometric MF | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA50R280E6IPA50R280 - 500V, CoolMOS N-Chan Infineon Technologies |
349 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AUIRFN8478TRAUIRFN8478 - 20V-40V N-CHANNEL A Infineon Technologies |
21,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPI072N10N3GOPTLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
500 | - |
|
数据表 |
OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | Through Hole | 3.5V @ 90µA | 68 nC @ 10 V | 100 V | ±20V | 4910 pF @ 50 V | - | - | PG-TO262-3-1 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF9Z34NLPBFPLANAR 40<-<100V Infineon Technologies |
335 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 35 nC @ 10 V | 55 V | ±20V | 620 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLU3114ZAUIRLU3114Z - 20V-40V N-CHANNEL Infineon Technologies |
3,631 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | Through Hole | 2.5V @ 100µA | 56 nC @ 4.5 V | 40 V | ±16V | 3810 pF @ 25 V | AEC-Q101 | - | PG-TO251-3 | Automotive | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLU3114Z-701TRLAUIRLU3114Z - 20V-40V N-CHANNEL Infineon Technologies |
39,000 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | Through Hole | 2.5V @ 100µA | 56 nC @ 4.5 V | 40 V | ±16V | 3810 pF @ 25 V | AEC-Q101 | - | PG-TO251-3 | Automotive | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF40DM229IRF40 - 12V-300V N-CHANNEL POWER Infineon Technologies |
4,194 | - |
|
数据表 |
StrongIRFET™ | DirectFET™ Isometric MF | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 159A (Tc) | 6V, 10V | 1.85mOhm @ 97A, 10V | Surface Mount | 3.9V @ 100µA | 161 nC @ 10 V | 40 V | ±20V | 5317 pF @ 25 V | - | - | DirectFET™ Isometric MF | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IRL8114PBFIRL8114 - 12V-300V N-CHANNEL POW Infineon Technologies |
8,800 | - |
|
数据表 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | - | 4.5mOhm @ 40A, 10V | Through Hole | 2.25V @ 250µA | 29 nC @ 4.5 V | 30 V | ±20V | 2660 pF @ 15 V | - | - | TO-220AB | - | 115W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF6797MTRPBFIRF6797 - 12V-300V N-CHANNEL POW Infineon Technologies |
16,950 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 38A, 10V | Surface Mount | 2.35V @ 150µA | 68 nC @ 4.5 V | 25 V | ±20V | 5790 pF @ 13 V | - | - | DIRECTFET™ MX | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) |
