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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLZ44NSTRRPBFMOSFET N-CH 55V 47A D2PAK Infineon Technologies |
3,369 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | Surface Mount | 2V @ 250µA | 48 nC @ 5 V | 55 V | ±16V | 1700 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) |
|
SI4435DYPBFMOSFET P-CH 30V 8A 8SO Infineon Technologies |
2,018 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | Surface Mount | 1V @ 250µA | 60 nC @ 10 V | 30 V | ±20V | 2320 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SPS04N60C3E8177AKMA1LOW POWER_LEGACY Infineon Technologies |
4,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPA60R600CPXKSA1IPA60R600 - 600V COOLMOS N-CHANN Infineon Technologies |
8,500 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | Through Hole | 3.5V @ 220µA | 27 nC @ 10 V | 600 V | ±20V | 550 pF @ 100 V | - | - | PG-TO220-3-31 | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD50N04S308ATMA1IPD50N04 - 20V-40V N-CHANNEL AUT Infineon Technologies |
125,808 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | Surface Mount | 4V @ 40µA | 35 nC @ 10 V | 40 V | ±20V | 2350 pF @ 25 V | - | - | PG-TO252-3 | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFZ34NAUIRFZ34 - 55V-60V N-CHANNEL AUT Infineon Technologies |
6,000 | - |
|
数据表 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 34 nC @ 10 V | 55 V | ±20V | 700 pF @ 25 V | - | - | TO-220AB | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF6637TRPBFIRF6637 - 12V-300V N-CHANNEL POW Infineon Technologies |
1,172 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | Surface Mount | 2.35V @ 250µA | 17 nC @ 4.5 V | 30 V | ±20V | 1330 pF @ 15 V | - | - | DIRECTFET™ MP | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) |
|
|
AUIRFZ48ZAUIRFZ48Z - 55V-60V N-CHANNEL AU Infineon Technologies |
4,817 | - |
|
数据表 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | Through Hole | 4V @ 250µA | 64 nC @ 10 V | 55 V | ±20V | 1720 pF @ 25 V | - | - | TO-220 | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
|
SPP08N50C3XKSA1SPP08N50 - 800V COOLMOS N-CHANNE Infineon Technologies |
22,195 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Through Hole | 3.9V @ 350µA | 32 nC @ 10 V | 560 V | ±20V | 750 pF @ 25 V | - | - | PG-TO220-3-1 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP70N04S406AKSA1MOSFET_(20V,40V) Infineon Technologies |
49,890 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | Through Hole | 4V @ 26µA | 32 nC @ 10 V | 40 V | ±20V | 2550 pF @ 25 V | - | - | PG-TO220-3-1 | - | 58W (Tc) | -55°C ~ 175°C (TJ) |
