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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFL7004

GSFL7004

MOSFET, N-CH, SINGLE, 4.00A, 700

Good-Ark Semiconductor

2,670 -
GSFL7004

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.3Ohm @ 2A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 700 V ±30V 304 pF @ 50 V - - SOT-223 - 5.2W (Tc) -55°C ~ 150°C (TJ)
GSFH03152

GSFH03152

MOSFET, N-CH, SINGLE, 150.00A, 3

Good-Ark Semiconductor

467 -
GSFH03152

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150A (Ta) 4.5V, 10V 3.4mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 70.6 nC @ 10 V 30 V ±20V 3400 pF @ 25 V - - TO-220-3 - 110W (Ta) -55°C ~ 175°C (TJ)
GSJU60R880

GSJU60R880

MOSFET, N-CH, SINGLE, 5.00A, 600

Good-Ark Semiconductor

1,990 -
GSJU60R880

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 880mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 12 nC @ 10 V 600 V ±30V 304 pF @ 100 V - - TO-220F - 28W (Tc) -55°C ~ 150°C (TJ)
GSFH08140

GSFH08140

MOSFET, N-CH, SINGLE, 140.00A, 8

Good-Ark Semiconductor

484 -
GSFH08140

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 10V 6mOhm @ 20A, 10V Through Hole 4V @ 250µA 158 nC @ 10 V 80 V ±20V 7900 pF @ 40 V - - TO-220-3 - 220W (Tc) -55°C ~ 175°C (TJ)
GSFPB0976

GSFPB0976

MOSFET, N-CH, SINGLE, 80.00A, 10

Good-Ark Semiconductor

6,000 -
GSFPB0976

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8mOhm @ 15A, 10V Surface Mount 4V @ 250µA 47 nC @ 10 V 100 V ±20V 2780 pF @ 50 V - - 8-PPAK (5.1x5.71) - 125W (Tc) -55°C ~ 150°C (TJ)
GSFL65R900

GSFL65R900

MOSFET, N-CH, SINGLE, 5.00A, 650

Good-Ark Semiconductor

2,998 -
GSFL65R900

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 650 V ±30V 300 pF @ 100 V - - SOT-223 - 20W (Tc) -55°C ~ 150°C (TJ)
GSFD8005

GSFD8005

MOSFET, N-CH, SINGLE, 5.5A, 800V

Good-Ark Semiconductor

4,980 -
GSFD8005

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 2.7Ohm @ 2.5A, 10V Surface Mount 4V @ 250µA 15.16 nC @ 10 V 800 V ±30V 678 pF @ 25 V - - TO-252 (DPAK) - 132W (Tc) -55°C ~ 150°C (TJ)
GSFU6513

GSFU6513

MOSFET, N-CH, SINGLE, 13.00A, 65

Good-Ark Semiconductor

2,000 -
GSFU6513

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 800mOhm @ 6A, 10V Through Hole 4V @ 250µA 24.2 nC @ 10 V 650 V ±30V 1746 pF @ 25 V - - TO-220F - 51W (Tc) -55°C ~ 150°C (TJ)
GSGP1R103

GSGP1R103

MOSFET, N-CH, SINGLE, 100.00A, 3

Good-Ark Semiconductor

9,984 -
GSGP1R103

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 1.1mOhm @ 30A, 10V Surface Mount 2.3V @ 250µA 40 nC @ 4.5 V 30 V ±20V 5900 pF @ 15 V - - 8-PPAK (5.1x5.86) - 93W (Tc) -55°C ~ 150°C (TJ)
GSFD6008

GSFD6008

MOSFET, N-CH, SINGLE, 7.00A, 600

Good-Ark Semiconductor

4,987 -
GSFD6008

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 570mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 600 V ±30V 602 pF @ 100 V - - TO-252 (DPAK) - 60W (Tc) -55°C ~ 150°C (TJ)
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