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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT045N10TMOSFET N-CH 100V 120A 180W 4.5m( Goford Semiconductor |
5,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 4.5mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 78 nC @ 10 V | 100 V | ±20V | 6094 pF @ 50 V | - | - | TO-220 | - | 180W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT025N06AMMOSFET N-CH 60V 170A TO-263 Goford Semiconductor |
8,000 | - |
|
数据表 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-263 | - | 215W (Tc) | -55°C ~ 150°C (TJ) |
|
GC11N65FMOSFET N-CH 650V 11A TO-220F Goford Semiconductor |
10,000 | - |
|
数据表 |
Cool MOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | - | - | ±30V | - | - | - | TO-220F | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) |
|
GC11N65TMOSFET N-CH 650V 11A TO-220 Goford Semiconductor |
4,000 | - |
|
数据表 |
Cool MOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | - | - | ±30V | - | - | - | TO-220 | - | 192W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G080P06MMOSFET P-CH 60V 195A TO-263 Goford Semiconductor |
8,000 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | - | - | ±20V | 15870 pF @ 30 V | - | - | TO-263 | - | 294W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G040P04MMOSFET P-CH 40V 180A TO-263 Goford Semiconductor |
8,000 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 4.5V, 10V | 3.5mOhm @ -15A,- 10V | Surface Mount | 2.5V @ 250µA | 206 nC @ 10 V | 40 V | ±20V | 14983 pF @ -20 V | - | - | TO-263 | - | 178W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GC280N65FMOSFET N-CH 650V 15A 96.1W 280m( Goford Semiconductor |
5,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 280mOhm @ 7.5A, 10V | Through Hole | 4.5V @ 250µA | 27 nC @ 10 V | 650 V | ±20V | 1200 pF @ 400 V | - | - | TO-220F | - | 96.1W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GC20N65MMOSFET N-CH 650V 20A 151W 180m( Goford Semiconductor |
800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 180mOhm @ 10A, 10V | Surface Mount | 5V @ 250µA | 28 nC @ 10 V | 650 V | ±30V | 1680 pF @ 400 V | - | - | TO-263 | - | 151W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT015N06TLMOSFET N-CH 60V 350A 350W 1m(ma Goford Semiconductor |
6,000 | - |
|
数据表 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 350A (Tc) | 4.5V, 10V | 1mOhm @ 80A, 10V | Surface Mount | 2.5V @ 250µA | 152 nC @ 10 V | 60 V | ±20V | 10694 pF @ 30 V | - | - | TOLL-8L | - | 350W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GC20N65FDMOSFET N-CH 650V 20A 40W TO-220 Goford Semiconductor |
10,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | Through Hole | 5V @ 250µA | 39 nC @ 10 V | 650 V | ±30V | 1729 pF @ 100 V | - | - | TO-220F | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
